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Photoresist topcoat compositions and methods of processing photoresist compositions

A technology of photoresist and top coating, which is applied in the field of top coating, and can solve problems affecting the yield of devices, etc.

Pending Publication Date: 2019-07-09
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additionally, the use of a topcoat can adversely affect device yield due to, for example, micro-bridging defects or other patterning defects that prevent proper resist pattern formation

Method used

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  • Photoresist topcoat compositions and methods of processing photoresist compositions
  • Photoresist topcoat compositions and methods of processing photoresist compositions
  • Photoresist topcoat compositions and methods of processing photoresist compositions

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Experimental program
Comparison scheme
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[0107] Molecular weight determination:

[0108] The polymer quantity and weight average molecular weight Mn and Mw and polydispersity (PDI) value (Mw / Mn) were measured by gel permeation chromatography (GPC) on a Waters Alliance System GPC equipped with a refractive index detector. The sample was dissolved in HPCL grade THF at a concentration of about 1 mg / mL and passed through four Shodex Columns (KF805, KF804, KF803 and KF802) were injected. Maintain a flow rate of 1 mL / min and a temperature of 35°C. The column was calibrated with a narrow molecular weight PS standard (EasiCal PS-2, Polymer Laboratories, Inc.).

[0109] Dissolution rate (DR) measurement:

[0110] On the TEL ACT-8 wafer track, the 8-inch silicon wafer was coated with primer HMDS at 120°C for 30 seconds, and then coated with 4-methyl-2-pentanol containing 14wt% solids at 1500rpm Matrix polymer solution, and soft bake the wafer at 90°C for 60 seconds. The film thickness is measured on the Thermawave Optiprobe film...

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PUM

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Abstract

Photoresist topcoat compositions include a water-containing alkali-soluble polymer containing the monomer shown as the following general formula (I) as a polymerization unit, wherein: R1 is chosen from H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R2 is independently chosen from substituted or unsubstituted C1-C12 alkyl or substituted or unsubstituted C5-C18 aryl; R3 and R4 are independently H, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C5-C18 aryl; X is a C2-C6 substituted or unsubstituted alkylene group; X can optionally comprise one or more rings and together with R2 can optionally form a ring; L1 is a single bond or a linking group; p is an integer of from 1 to 50; and q is an integer of from 1 to 5. The compositions also include a solvent. Substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The compositions are particularly suitable for the manufacture of semiconductor devices.

Description

Technical field [0001] The present invention relates to a photoresist topcoat composition that can be applied on top of the photoresist composition. The present invention is particularly suitable for use as a top coat in an immersion lithography process for forming semiconductor devices. Background technique [0002] Photoresist is used to transfer the image to the substrate. A photoresist layer is formed on the substrate and then the photoresist layer is exposed to an activating radiation source through a photomask. The photomask has areas that are opaque to activating radiation and other areas that are transparent to activating radiation. Exposure to activating radiation provides a photo-induced chemical conversion of the photoresist coating, thereby transferring the pattern of the photomask to the photoresist-coated substrate. After exposure, the photoresist is baked and developed by contact with a developer solution, thereby obtaining a relief image that allows selective p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004
CPCG03F7/004G03F7/11C09D133/14C09D133/08C09D133/16C08F220/24G03F7/2041C08F220/282C08F220/283C08F220/286C08F220/281C08F220/1804G03F7/0382C08F220/18C08L33/08C08L33/14C08F220/285G03F7/168G03F7/38G03F7/322C08F220/06C09D133/02G03F7/16
Inventor J·A·凯茨C·吴I·考尔李明琦D·康侯希森刘骢
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC