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A lateral double-diffused metal oxide semiconductor device and electronic device

An oxide semiconductor, lateral double diffusion technology, applied in semiconductor devices, circuits, transistors, etc., can solve the problem of low forward conduction voltage, and achieve the effect of improving recovery performance, wide application and good high frequency performance

Active Publication Date: 2022-05-27
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, its forward conduction voltage is lower than that of ordinary diodes

Method used

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  • A lateral double-diffused metal oxide semiconductor device and electronic device
  • A lateral double-diffused metal oxide semiconductor device and electronic device
  • A lateral double-diffused metal oxide semiconductor device and electronic device

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Embodiment Construction

[0040] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other instances, some technical features known in the art have not been described in order to avoid obscuring the present invention.

[0041] It should be understood that the present invention may be embodied in different forms and should not be construed as limited to the examples set forth herein. Rather, these examples are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0042] The terminology used herein is for the purpose of describing specific examples only and not limiting of the invention. As used herein, the singular forms "a," "an," and "the / the" are intended to include the plural fo...

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Abstract

The invention provides a lateral double-diffused metal oxide semiconductor device and an electronic device. The semiconductor device includes: a substrate; and a source region and a drain region, the source region and the drain region are located in the substrate, wherein A source and a drain are respectively formed on the surface of the substrate on the source region and the drain region, and a Schottky diode is formed between the source and the drain. The off-state drift extension is depleted by the body region and the device works like a conventional LDMOS. When the device switches, the Schottky diode switches faster and turns on earlier to improve high frequency performance.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a lateral double-diffused metal oxide semiconductor device and an electronic device having the same. Background technique [0002] With the continuous development of semiconductor technology, lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) devices are widely used in power integrated circuits due to their good short-channel characteristics. LDMOS devices are ideal for RF (Radio Frequency) base station and power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) switching. In the application of RF technology, because LDMOS has high power performance, high gain, excellent linearity (linearity) and low manufacturing cost, LDMOS devices are mainly used in base station circuits. In power MOSFET applications, such as in DC-CD converters, LDMOS devices have excellent conversion performance, and LDMOS devices can reduce conversion ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78
CPCH01L29/782
Inventor 冯喆韵胡林辉姚尧蒲贤勇
Owner SEMICON MFG INT (SHANGHAI) CORP