Semiconductor device structure and preparation method

Abstract

The invention provides a semiconductor device structure and a preparation method thereof. The preparation method of the semiconductor device structure comprises the following steps: providing a semiconductor substrate, and forming a first metal layer; forming a first trench in the first metal layer, and depositing a first interlayer dielectric layer in and around the first trench; forming a firsthydrogen shielding layer; forming a first plug in the first hydrogen shielding layer and the first interlayer dielectric layer; forming a stacked structure which is composed of a lower electrode layer, a resistive oxide layer, and an upper electrode layer and is connected to the first plug; and forming a continuous second hydrogen shielding layer on the stacked structure, and forming a second interlayer dielectric layer. According to the invention, through the design of the first hydrogen shielding layer and the second hydrogen shielding layer, the lower electrode layer, the resistive oxide layer and the upper electrode layer are protected; the influence of the environment and the manufacture process on the resistive oxide layer is prevented; the influence on the metal layer of the deviceand the influence of the annealing process ensuring the transistor characteristics on the resistive oxide layer are prevented; and the diffusion of hydrogen ions staying in the interlayer dielectric layer during an operational process of the device is comprehensively and effectively prevented.

Description

technical field [0001] The invention belongs to the technical field of semiconductor design and manufacture, and in particular relates to a device structure and a preparation method of a semiconductor memory. Background technique [0002] Many modern electronic devices have electronic memory used to store data. Electronic memory can be volatile memory or non-volatile memory. Volatile memory stores data when powered, while non-volatile memory is capable of storing data when there is no power. Resistive random access memory (RRAM) is a promising option for next-generation non-volatile memory technology. The structure of RRAM is simple, the required cell area is small, the switching voltage is low, and the switching time is short. [0003] Generally, in the conventional RRAM manufacturing process, it consists of a variable resistance oxide material layer, an upper electrode material layer and a lower electrode material layer. The variable resistance oxide layer directly aff...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a semiconductor device structure and preparation method for solving the problem of the susceptibility of the intermediate variable resistance layer in the prior art and the annealing and interlayer dielectric layer of the device preparation. The impact of formation and other processes on device performance

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