Large-area single-element two-dimension material preparing equipment and preparing method

Abstract

The invention provides large-area single-element two-dimension material preparing equipment and a preparing method. The equipment comprises an atmosphere adjusting device, a low-temperature cooling device, an air pipe, a vacuum adjusting device, a circulation water device and an evaporation deposition device. Through the design of the equipment, the material preparing preparation and reaction timecan be obviously shortened, the production cost is reduced, and the production efficiency is improved. Limited from the equipment size, limitation of the provided method is avoided, large-area single-element two-dimension tellurium film materials can be prepared on a four-inch silicon wafer, a two-dimension single-element film can be prepared on a substrate not covered with photoresist, and the size, the thickness and the position can be controlled.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and in particular relates to a large-area single-element two-dimensional material preparation equipment and a preparation method. Background technique [0002] Two-dimensional material is a kind of layered nanomaterial, the atoms in the layer are connected by covalent bonds, which has strong force, but there is no dangling bond between layers, and the force is weak van der Waals force. Materials with nanoscale dimensions in the thickness direction generally have a thickness of a fraction of a nanometer to tens of nanometers, and a horizontal dimension of nanometers, microns, centimeters or even meters. Due to the nanoscale scale in the thickness direction, two-dimensional materials have been greatly developed and researched in the past ten years, and many excellent physical and chemical properties have been discovered, such as the quantum size effect and quantum confinement effec...

AI Technical Summary

Problems solved by technology

However, the two-dimensional materials prepared by the hydrothermal method have the following problems: the change of thickness with the holding time is uneven and the reaction time is long; other impurities are easily introduced during the purification and dispersion process, and the strong scattering between the substrate and the material reduces the performance; The horizontal size of the material is small, and the distribution on the substrate is uneven, which limits the subsequent array design, logic circuit construction and flexible electronic device fabrication.

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