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Magnetic tunnel junction device and magnetic random access memory

A magnetic tunnel junction and device technology, applied in the field of electronics, can solve the problems of easy data loss and difficult to write in MRAM.

Active Publication Date: 2019-07-16
CETHIK GRP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] An embodiment of the present invention provides a magnetic tunnel junction device and a magnetic random access memory, to at least solve the technical problems of the existing MRAM that it is difficult to write data at low temperature and easy to lose data when reading data at high temperature

Method used

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  • Magnetic tunnel junction device and magnetic random access memory
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  • Magnetic tunnel junction device and magnetic random access memory

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Embodiment Construction

[0028] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0029] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

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Abstract

The invention discloses a magnetic tunnel junction device and a magnetic random access memory. The magnetic tunnel junction device comprises a first magnetic layer, a second magnetic layer, a third magnetic layer, a first separation layer between the first magnetic layer and the second magnetic layer, and a second separation layer between the second magnetic layer and the third magnetic layer, wherein the magnetization direction of the third magnetic layer is fixed; the magnetization direction of the second magnetic layer is parallel to or anti-parallel to the magnetization direction of the third magnetic layer; the magnetization direction of the second magnetic layer is related to the direction of a current in the magnetic tunnel junction device; the magnetization intensity of the first magnetic layer is related to the temperature of an environment where the magnetic tunnel junction device is located; and the first magnetic layer provides a spin transfer torque for the second magneticlayer. The technical problems that an existing MRAM is difficult in data writing at a low temperature and easy in read data loss at a high temperature are solved.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a magnetic tunnel junction device and a magnetic random access memory. Background technique [0002] Magnetic random access memory (abbreviated as MRAM) is a memory that uses current to change a magnetic tunnel junction (abbreviated as MTJ), which is a new type of memory with great potential. In addition to the advantages of simple circuit design, fast read and write speed, and unlimited erasing and writing, the memory has the biggest advantage over traditional memories such as DRAM in that it is non-volatile, that is, data will not be lost when power is turned off. As a non-volatile memory, MRAM has great prospects in outdoor and Internet of Things applications, which requires that MRAM can work normally under different operating temperatures and ensure that data is not lost. However, the existing MRAM is difficult to write data at low temperature and easy to lose data when reading d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08G11C11/16H10N50/10
CPCG11C11/16H10N50/10
Inventor 何世坤竹敏
Owner CETHIK GRP
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