Discharge plasma diffusion bonding method for silicon carbide ceramic

A technology of discharge plasma and silicon carbide ceramics is applied in the field of connection of ceramic materials, which can solve the problems of stress concentration at the connection, poor air tightness of the joint, and poor heat resistance.

Inactive Publication Date: 2019-07-23
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Mechanical connection joints can withstand high temperature and stress, but the airtightness of the joints is poor, and the joints are prone to stress concentration
The brazing method can prepare dense brazed joints, but the strength of the joint is low, the heat resistance is poor, and in some cases the wettability between the solder and th

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  • Discharge plasma diffusion bonding method for silicon carbide ceramic
  • Discharge plasma diffusion bonding method for silicon carbide ceramic
  • Discharge plasma diffusion bonding method for silicon carbide ceramic

Examples

Experimental program
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Embodiment 1

[0033] In this embodiment, the connection method of the SiC ceramic connected by the discharge plasma diffusion connection of the multiphase ceramic connection layer is as follows:

[0034] 1. Preparation of connecting layer powder

[0035] With 69.1% ZrH 2 powder, 10.5% Si powder and 20.4% B 4 C powder is mixed as the raw material and poured into the agate grinding bowl, using absolute alcohol as the grinding medium, grinding for 3 hours until completely mixed, and then placed in a vacuum drying oven at 60°C for 6 hours to obtain the connecting layer powder;

[0036] 2. Preparation before diffusion connection

[0037] Cylindrical SiC ceramics were sliced ​​with an internal circle slicer Cut into SiC ceramic sheets with a thickness of 3 mm, and use 3.5 μm and 1 μm diamond suspension polishing fluids to polish the connecting surface of the SiC ceramic sheets in turn, put the polished SiC ceramic sheets into an alcohol solution for ultrasonic cleaning, and air-dry at room te...

Embodiment 2

[0043] In this embodiment, the connection method of the SiC ceramic connected by the discharge plasma diffusion connection of the multiphase ceramic connection layer is as follows:

[0044] 1. Preparation of connecting layer powder

[0045] With 69.1% ZrH 2 powder, 10.5% Si powder and 20.4% B 4 C powder is mixed as the raw material and poured into the agate grinding bowl, using absolute alcohol as the grinding medium, grinding for 3 hours until completely mixed, and then placed in a vacuum drying oven at 60°C for 6 hours to obtain the connecting layer powder;

[0046] 2. Preparation before diffusion connection

[0047] Cylindrical SiC ceramics were sliced ​​with an internal circle slicer Cut into SiC ceramic sheets with a thickness of 3 mm, and use 3.5 μm and 1 μm diamond suspension polishing fluids to polish the connecting surface of the SiC ceramic sheets in turn, put the polished SiC ceramic sheets into an alcohol solution for ultrasonic cleaning, and air-dry at room te...

Embodiment 3

[0053] In this embodiment, the connection method of the SiC ceramic connected by the discharge plasma diffusion connection of the multiphase ceramic connection layer is as follows:

[0054] 1. Preparation of connecting layer powder

[0055] With 69.1% ZrH 2 powder, 10.5% Si powder and 20.4% B 4 C powder is mixed as the raw material and poured into the agate grinding bowl, using absolute alcohol as the grinding medium, grinding for 3 hours until completely mixed, and then placed in a vacuum drying oven at 60°C for 6 hours to obtain the connecting layer powder;

[0056] 2. Preparation before diffusion connection

[0057] Cylindrical SiC ceramics were sliced ​​with an internal circle slicer Cut into SiC ceramic sheets with a thickness of 3 mm, and use 3.5 μm and 1 μm diamond suspension polishing fluids to polish the connecting surface of the SiC ceramic sheets in turn, put the polished SiC ceramic sheets into an alcohol solution for ultrasonic cleaning, and air-dry at room te...

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Abstract

The invention discloses a discharge plasma diffusion bonding method for silicon carbide ceramic. Materials of a bonding layer mainly consist of ZrB2 and SiC two phases. The preparation of a multiphaseceramic bonding layer and the diffusion bonding of SiC ceramic joints are completed at the same time. The bonding layer is formed by an in-situ reaction of ZrH2, B4C and Si powder at high temperature. The proportion of the raw materials is as follows, by mass percent: 20-25% of the B4C and 10-15% of the Si, with the balance being the ZrH2. The bonding layer is composed of composite ceramic composed of ZrB2 and SiC and has thermophysical properties and mechanical properties similar to those of SiC ceramic, thereby realizing good interface bonding, avoiding the formation of joint cracks and improving the joint strength.

Description

technical field [0001] The invention relates to a discharge plasma diffusion connection method of silicon carbide ceramics, which belongs to the field of connection of ceramic materials. Background technique [0002] With the advancement of science and technology and the development of modern industry, the requirements for the required structural materials are becoming more and more stringent. In some extreme high temperature, high corrosion, high wear, strong radiation and other environments, traditional metal materials can no longer To meet the needs of use. In this case, some advanced ceramic materials stand out with their excellent properties such as high temperature stability, corrosion resistance, wear resistance, and radiation resistance, and the demand for ceramics and their composite structural parts is increasing. Due to the constraints of technology and equipment, it is difficult to directly prepare large-sized or complex-shaped structural parts from ceramic mate...

Claims

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Application Information

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IPC IPC(8): C04B37/00
CPCC04B37/003C04B2237/08
Inventor 钟志宏孙博文李振林瑜宋奎晶
Owner HEFEI UNIV OF TECH
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