KDP crystalloid long-seed crystal single-cone growth method

Abstract

The invention discloses a KDP crystalloid long-seed crystal single-cone growth method. According to the growth method, the lower end of a long-seed crystal is limited by a lower tray, the upper end ofthe long-seed crystal freely and conically grows, four cylindrical surfaces in the two directions of (100) and (010) can grow, the problem of growth stress is omitted in the growth process of the crystal, all cut out optical elements have high optical quality, four cylindrical surfaces with highly similar growing environments simultaneously grow in the growth process, mixing is implemented by a leaf-shaped mixing propellers in the growth process of the crystal, so that the cut out optical elements have high optical homogeneity, a cutting angle of a KDP crystal triple frequency element is unique, the grown crystal has high cutting efficiency when cutting the triple frequency element, and the area of the cut maximum triple frequency element can be known according to the horizontal size of the grown crystal in advance.

Description

technical field [0001] The invention relates to KDP-like crystals, in particular to a method for growing KDP-like crystals with long seed crystals and single cones, aiming at rapidly growing KDP-like crystals with high cutting efficiency and low growth stress. Background technique [0002] Potassium dihydrogen phosphate / dideuterium potassium phosphate (KDP / DKDP) crystal material is widely used in the production of frequency doubling and electro-optical devices due to its large nonlinear optical coefficient, wide transmission band, and excellent optical uniformity. Laser inertial confinement fusion (ICF) devices in various countries require a large number of high-quality, large-diameter KDP crystals; among them, KDP crystals are used as optical switches and frequency-doubling components, and DKDP crystals are used as frequency-tripling components. However, the KDP-like crystals grown by the prior art mainly have defects such as poor crystal quality and low aspect ratio, and f...

AI Technical Summary

Problems solved by technology

In the crystal carrier provided by the invention, the upper and lower horizontal plates are of plate structure, which greatly disturbs the growth solution during the crystal growth and rotation process, resulting in a decline in crystal quality; the invention fixes the seed crystal on the lower surface or lower surface of the upper horizontal plate. The center of the upper surface of the horizontal plate, but it is only rotated during the crystal growth without stirring effect, which will cause uneven crystal growth; and when the crystal grows to touch another horizontal plate, the collision contact between the crystal and the horizontal plate will occur , resulting in the growth of miscellaneous crystals

The invention patent with application number CN201710987729.6 and application publication number CN107805844A introduces a method for limiting the growth of KDP-like crystals with long seed crystals. During the growth process of this invention, the growth stress of the seed crystal will be relatively large because the seed crystal grows both up and down. Causes growth difficulties, and the height of the seed crystal that needs to be provided is large, which increases the growth pressure

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