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Semiconductor gas sensor and preparation method thereof

A gas sensor and semiconductor technology, which is applied in the field of micro-thin film gas sensor preparation, can solve the problems of poor gas sensitivity and achieve the effect of improving sensitivity and simple method

Inactive Publication Date: 2019-07-26
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the surface of the gas-sensing film made by sputtering is very dense, and the gas molecules can only contact with the surface material, and the gas-sensing performance is poor.

Method used

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  • Semiconductor gas sensor and preparation method thereof
  • Semiconductor gas sensor and preparation method thereof
  • Semiconductor gas sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] The preparation process of the semiconductor gas sensor provided in this embodiment is as follows: figure 2 Shown, preparation method comprises the steps:

[0082] (1) The sensor substrate is made by MEMS technology, including Si 3 N 4 / Si substrate cleaning, photolithography to make Pt heating resistors, deposition of silicon oxide insulating layer, optical exposure to make interdigital electrodes, and exposure of gold interdigital electrode areas through conventional photolithography processes.

[0083] (2) Prepare 10nm gold nanoparticles and coat them with dodecyl mercaptan molecules, self-assemble at the water / air interface, and transfer them to the sensor substrate with a PDMS stamp; use 100W power magnetron sputtering of SnO 2 / NiO target for 430s to obtain SnO with a thickness of about 20nm 2 / NiO film, where, image 3 A schematic diagram of the structure of gold nanoparticles coated with dodecyl mercaptan molecules is given, Figure 4 A schematic diagram o...

Embodiment 2

[0088] The preparation method of the semiconductor gas sensor provided in this embodiment comprises the following steps:

[0089] (1) The sensor substrate is made by MEMS technology, including Si 3 N 4 / Si substrate cleaning, photolithography to make Pt heating resistors, deposition of silicon oxide insulating layer, optical exposure to make gold finger electrodes, and expose the gold finger electrode area through conventional photolithography process.

[0090] (2) Prepare 10nm gold nanoparticles and coat them with dodecyl mercaptan molecules, self-assemble the gold nanoparticles in the LB tank, insert the sensor substrate into the LB tank and pull it slowly, large-area long-range ordered gold nanoparticles Particle arrays were transferred onto the sensor substrate; SnO was magnetron sputtered using a power of 100W 2 Target 860s, get SnO with a thickness of about 40nm 2 film.

[0091] (3) Soak the sensor substrate in acetone for 5 minutes to remove the residual photoresist...

Embodiment 3

[0095] The only difference from Example 1 is that the gas-sensitive thin film deposited in this example is 20nm WO 3 Except for the film, other preparation methods and conditions are the same as in Example 1.

[0096] The yield rate of the acetone sensor obtained in this embodiment is >95%, and the consistency deviation is <10%.

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Abstract

The invention provides a semiconductor gas sensor and preparation method thereof. The semiconductor gas sensor comprises a metal nanoparticle array and a gas-sensitive film, wherein the gas-sensitivefilm is deposited on the metal nanoparticle array, and the surface of the gas-sensitive film has a high-low fluctuation ordered structure. The high-low fluctuation ordered structure improves the interaction area between the gas-sensitive film and the gas. The gas-sensitive film is deposited on the metal nanoparticle array, and the effective regulation and control of the gas-sensitive film structure can be realized by adjusting the arrangement mode of the metal nanoparticle array, so that the sensitivity of the gas-sensitive film for detecting gas is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of preparation of micro-thin film gas sensor, and relates to a semiconductor gas sensor and a preparation method thereof. Background technique [0002] As people pay more and more attention to environmental protection, it is necessary to build an environmental Internet of Things to effectively monitor toxic, flammable, explosive and other gases. Higher requirements such as high performance, miniaturization, and multi-function are put forward for gas sensors. In the past two decades, the development of new nanomaterials has developed rapidly, especially various oxide semiconductor nanomaterials, such as nanowires, nanorods, nanoflowers, hollow spheres or sponge-like porous structures, heterojunctions, etc.; Novel gas-sensitive material is coated or printed on the traditional sensor substrate (ceramic tube or the plane substrate with heating plate) and the gas-sensing sensor that prepares has high sensitivity ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 王颖韩宁汪舟陈运法
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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