Wafer producing method and wafer producing apparatus
A wafer and single crystal technology, applied in the field of wafer generation and wafer generation equipment, can solve the problems of poor production efficiency and difficulty in judging whether the wafer peeling is completed or not
Pending Publication Date: 2019-07-30
DISCO CORP
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Problems solved by technology
[0007] However, it is difficult to peel the wafer from the hexagonal single-crystal SiC ingot starting from the peeled layer, resulting in poor productivity.
In addition, there is also a problem that it is difficult to judge whether the peeling of the wafer from the hexagonal single crystal SiC ingot is completed
Method used
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Embodiment Construction
[0028] Below, while referring to the attached Figure 1 Embodiments of the wafer production method and the wafer production apparatus of the present invention will be described.
[0029] First, the wafer production apparatus of the present invention will be described. figure 1 The wafer production apparatus 2 shown has: an ingot holding unit 4 that holds a hexagonal single crystal SiC ingot (hereinafter, simply referred to as “ingot”); an ultrasonic wave generating unit 6 that generates ultrasonic waves and has a The opposite end face 6a; the water supply member 8, which provides water between the wafer to be generated and the ultrasonic generating unit 6 to form a water layer; the microphone 10, which is arranged adjacent to the ingot, and controls the sound transmitted from the ingot to the air. The sound is collected; the detachment detection member 12 is connected with the microphone 10 and detects the detachment of the wafer to be produced from the ingot according to the...
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Abstract
The present invention provides a wafer producing method and a wafer producing apparatus which can easily separate from a hexagonal single crystal ingot by taking a stripping layer as a starting pointand can easily determine the completion of the wafer from the hexagonal single crystal ingot. The method comprises the steps of: the formation process of a stripping process, positioning a focal point(FP) of a laser beam (LB) of such a wavelength as to be transmitted through the hexagonal single crystal ingot (50) at a depth corresponding to a thickness of a wafer to be produced from an end faceof the hexagonal single crystal ingot (50) and applying the laser beam (LB) to the hexagonal single crystal ingot (50) to form a separation layer (74), positioning an ultrasonic wave generating unit (6) so as to face the wafer to be produced with a layer of water interposed therebetween and generating an ultrasonic wave through the layer of water to break down the separation layer (74), and detecting separation of the wafer to be produced from the hexagonal single crystal ingot (50) according to change in sound.
Description
technical field [0001] The present invention relates to a method for producing wafers from a hexagonal single crystal ingot and a wafer producing apparatus. Background technique [0002] IC, LSI, LED and other devices are based on Si (silicon) or Al 2 o 3 (sapphire) and the like are formed by laminating functional layers on the front surface of a raw material wafer and dividing by a plurality of intersecting dividing lines. In addition, power devices, LEDs, etc. are formed by laminating functional layers on the front surface of a wafer made of hexagonal single crystal SiC (silicon carbide) and dividing by a plurality of intersecting dividing lines. The wafer on which the devices are formed is processed along the planned dividing line by a cutting device or a laser processing device to be divided into individual device chips, and the divided device chips are used in electronic equipment such as mobile phones and personal computers. [0003] A wafer on which devices are for...
Claims
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IPC IPC(8): H01L21/02H01L21/66H01L21/67
CPCH01L21/02021H01L21/67017H01L21/67092H01L21/67253H01L22/26B28D5/0011B28D5/047H01L21/02002H01L21/78H01L22/12H01L21/02598H01L21/02378H01L21/02433B23K26/38H01L21/304B23K26/0006B23K26/53H01L21/322
Inventor 山本凉兵平田和也
Owner DISCO CORP