Method for cooling chamber, aln buffer layer growth process equipment and cooling treatment

Abstract

The embodiment of the present invention discloses a cooling chamber, an ALN ​​buffer layer growth process equipment, and a cooling treatment method using the cooling chamber, wherein the cooling chamber includes: a chamber body, a water cooling plate arranged in the chamber body, The tray and the adjustment mechanism; the tray is used to carry the wafer, and the water cooling plate is used to cool down the tray; the adjustment mechanism is used to adjust the distance between the tray and the water cooling plate. The cooling chamber, equipment and cooling treatment method of the present invention can improve the temperature uniformity of tray and wafer cooling, ensure the stability and consistency of process results, and can cool the tray to a lower temperature without being broken; Reach the target temperature in less time and increase the productivity of the equipment.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cooling chamber, an ALN ​​buffer layer growth process equipment and a cooling treatment method using the cooling chamber. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) technology is widely used in the semiconductor field. It uses sputtering (Sputtering) deposition technology to pass inert gases such as argon between the substrate and the target, and high voltage to ionize the inert gas. Plasma is generated, and the ability of bound electrons is enhanced by a magnetic field to make the generated plasma bombard the target, and atoms or ions of the target material are deposited on the substrate to form a thin film. The PVD AlN buffer layer has become a standard process in the LED field. Due to the addition of the AlN buffer layer, the electrical indicators such as brightness and yield of the LED are greatly improved, ...

AI Technical Summary

Problems solved by technology

The existing cooling chamber has the following disadvantages: due to the structure of the chamber, the distribution of cooling water and the inability to ensure complete symmetry, the heat in different positions of the tray and wafer cannot be cooled at the same speed; the gas inlet is asymmetrical in one direction, Therefore, the cooling rate near the air hole is faster than that at the far end, which is likely to cause stress on the tray and Wafer, or even breakage; the temperature of the tray during the cooling process is not monitored. When the cooling of the tray and Wafer is not sufficiently cooled, the process result is too high risk to personal safety

In addition, due to the inability to monitor the cooling rate, problems such as broken disks are prone to occur during the cooling experiment and production process

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