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Method for making semiconductor structure

A semiconductor and manufacturing process technology, applied in the field of semiconductor structure and its formation, can solve problems such as the increase of resistance value of memory

Inactive Publication Date: 2019-08-02
UNITED MICROELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After the etching of the above-mentioned stack structure is completed, a silicon nitride spacer layer is deposited on the stack structure by a chemical vapor deposition process. However, in the high-temperature environment of the above-mentioned chemical vapor deposition process, nitrogen will interact with the tungsten of the stack structure. The metal layer reacts to form tungsten nitride on its sidewalls, which leads to an increase in the resistance of the bit line of the memory

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  • Method for making semiconductor structure
  • Method for making semiconductor structure

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Embodiment Construction

[0019] In the following, details will be explained with reference to the accompanying drawings, the contents of which also constitute a part of the detailed description of the specification, and are shown in a specific example in which the embodiment can be practiced. The following examples are described in sufficient detail to enable those of ordinary skill in the art to implement them.

[0020] Of course, other embodiments may also be adopted, or any structural, logical, and electrical changes may be made without departing from the embodiments described herein. Therefore, the following detailed description should not be taken as limiting, but rather the embodiments contained therein will be defined by the appended claims.

[0021] The invention provides a manufacturing method of a semiconductor structure, for example, a bit line of a memory, which can have a lower resistance.

[0022] see figure 1 and figure 2 , which is a schematic cross-sectional view of a method for m...

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Abstract

The invention discloses a method for making a semiconductor structure. The method is characterized in that a substrate is provided; a bit line is formed on the substrate, the bit line includes a tungsten metal layer and an upper cover layer, and the upper cover layer is arranged on the tungsten metal layer; the low temperature physical vapor deposition process is performed, a silicon nitride gap wall layer covers the bit line and the substrate, the silicon nitride gap wall layer directly contacts the tungsten metal layer, and the low temperature physical vapor deposition process is performed in the temperature range of 200-400 DEG C.

Description

technical field [0001] The invention relates to a semiconductor structure and its forming method, in particular to a memory bit line structure and its forming method. Background technique [0002] As the integration level of the non-volatile memory increases day by day, the bit line width of the memory must also be reduced. However, the decrease of the line width of the bit line will cause the increase of its resistance value, so that the current of the memory cell will decrease, resulting in excessive bit line loading. It can be seen that the bit line resistance of the memory is very important to the operation performance of the memory. [0003] Generally, the bit line of the memory includes a stacked structure of multi-layer material films, for example, a tungsten metal layer is disposed on the polysilicon layer, and then a silicon nitride capping layer is disposed on the tungsten metal layer. After the etching of the above-mentioned stack structure is completed, a silic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11517H01L27/11563H10B41/00H10B43/00
CPCH10B41/00H10B43/00H01L21/0217H01L21/02266H01L21/76834H01L23/53266H01L23/53271H01L23/5226H01L23/5329
Inventor 林冠君黄信富陈威志
Owner UNITED MICROELECTRONICS CORP