Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer, and the P-type semiconductor layer Layers are sequentially stacked on the substrate; the light emitting diode epitaxial wafer also includes a stress release layer disposed between the N-type semiconductor layer and the active layer, and the stress release layer includes sequentially stacked AlGaN layers and an InGaN layer, the content of the Al component in the AlGaN layer gradually decreases along the direction from the N-type semiconductor layer to the active layer, and the content of the In component in the InGaN layer decreases along the direction from the N-type semiconductor layer to the active layer. The direction from the semiconductor layer to the active layer gradually increases. The invention is beneficial to the recombination of electrons and holes in the active layer to emit light, and improves the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light and is made by using the principle of semiconductor PN junction electroluminescence. The chip is the core component of the LED, including epitaxial wafers and electrodes arranged on the epitaxial wafers. [0003] Existing LED epitaxial wafers include a substrate and an epitaxial layer grown on the substrate. The epitaxial layer includes a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer stacked on the substrate in sequence. Among them, the substrate provides the surface for epitaxial growth, the buffer layer provides the nucleation center for epitaxial growth, the N-type semiconductor layer prov...

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Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the stress and defect accumulation in the active layer caused by the lattice mismatch between the substrate and the epitaxial layer in the prior art, resulting in electrons and holes The problem of reduced compound probability of

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