Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and its forming method, the forming method comprising: providing a substrate and fins protruding from the substrate, the number of the fins is at least two, and the fins are exposed on the substrate An isolation layer is provided, the isolation layer covers part of the sidewall of the fin, the isolation layer has a dummy gate across the fin, and the dummy gate covers part of the top and part of the sidewall of the fin; A dielectric layer is formed on the isolation layer, and the dielectric layer covers the sidewalls of the dummy gate; part of the dummy gate is removed to expose part of the tops of some number of fins, and a penetrating through the dielectric layer is formed in the dielectric layer. an opening in the layer thickness; forming an insulating layer that fills the opening. The present invention can form a semiconductor structure with a required number of channel regions on the basis of multiple positions where channel regions can be formed, thereby simplifying the process of forming a semiconductor structure with a specific number of channel regions.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen. [0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

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Problems solved by technology

[0004] However, the process methods for forming semiconductor structures in the prior art still need to be improved

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