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Method for inhibiting current drift of perovskite photoelectric detector by using alternating current and device
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A photodetector and current suppression technology, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., to achieve the effect of suppressing current drift and weakening current drift
Active Publication Date: 2019-08-16
HUAZHONG UNIV OF SCI & TECH
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[0004] The shortcoming of the existing perovskite photodetector to be solved by the present invention, the object of the present invention is to provide a kind of method and corresponding device that suppress perovskite photodetector current drift with alternating current, wherein, by this perovskite The AC bias applied to the photodetector can effectively suppress the current drift problem when the perovskite photodetector is working compared with the prior art. The present invention controls the bias voltage applied to the perovskite photodetector to be AC , the use of alternating current will weaken the ion migration phenomenon, thereby effectively suppressing the current drift problem when the perovskite photodetector is working
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Embodiment example 1
[0039] (1) Use deionized water, acetone, isopropanol, ethanol and deionized water to clean the conductive FTO glass for 15 minutes in sequence, and then dry the FTO glass with dry air;
[0040] (2) Weigh CsBr and PbBr according to the stoichiometric ratio 2 , to generate CsPbBr after mixing and grinding 3 powder;
[0041] (3) The obtained CsPbBr 3 Put the powder on the cleaned FTO glass, heat it in a muffle furnace at 610°C, and after it melts, cover it with a quartz cover to cool down;
[0042] (4) In the obtained CsPbBr 3 Evaporation electrodes on polycrystalline film;
[0045] (1) Use deionized water, acetone, isopropanol, ethanol and deionized water to clean the conductive FTO glass for 15 minutes in sequence, and then dry the FTO glass with dry air;
[0046] (2) MAI and PbI 2 Dissolve in N-N dimethylformamide (DMF) after weighing by molar ratio, heat and stir until completely dissolved.
[0047] (3) MAPbI 3 The precursor solution was dropped onto the surface of the substrate, then spin-coated at 3000r / min for 40s, and the perovskite film was obtained after annealing;
[0048] (4) Evaporate electrodes on the film by thermal evaporation.
[0049] (5) When working, the AC bias voltage is a square wavesignal, the period of the square wave signal is 10s, the duty cycle is 90%, and the peak-to-peak value of the high and low levels V pp is 5V.
Embodiment example 3
[0051] (1) MABr and PbBr 2 Dissolve in hydrobromic acid after weighing by molar ratio, heat and stir until completely dissolved;
[0053] (3) using thermal evaporation in MAPbBr 3 Evaporation electrodes on single crystals.
[0054] (4) The AC bias voltage is a square wave signal during work, the period of the square wave signal is 0.1s, the duty cycle is 10%, and the peak-to-peak value of the high and low levels V pp is 1V.
[0055] The above-mentioned embodiments 1-3 can effectively suppress the current drift of the perovskite photodetector. It can be seen from these embodiments that the drift of the dark current of the semiconductor radiation detector prepared by the method of the present invention is obtained under the AC bias voltage. Effective inhibition, the method of the present invention is applicable to perovskite materials prepared by various methods.
[0056] T...
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Abstract
The invention belongs to the technical field of semiconductor photoelectric detectors, and discloses a method for inhibiting current drift of a perovskite photoelectric detector by using an alternating current and a device. According to the method, the bias voltages applied to two ends of a perovskite functional layer in the perovskite photoelectric detector is an alternating current, the alternating current is employed to weaken the ionic migration phenomenon in the perovskite material in the perovskite functional layer so as to inhibit the current drift of the perovskite photoelectric detector in operation. The corresponding device comprises an alternating current power supply configured to finally apply the alternating current to the two ends of the perovskite functional layer. The alternating current is taken as the bias voltage of the perovskite functional layer to weaken the ionic migration phenomenon in the perovskite material in the perovskite functional layer and inhibit the current drift of the device in operation. The bias voltage applied when the perovskite photoelectric detector is the alternating current which is employed to weaken the ionic migration phenomenon so asto effectively inhibit the current drift problem when the perovskite photoelectric detector is operated.
Description
technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, and more specifically relates to a method for suppressing the current drift of a perovskite photodetector with alternating current, and can obtain corresponding devices after suppressing the current drift. Background technique [0002] A photodetector is a device that captures light signals in a specific wavelength range and converts them instantly into electrical signals. Photodetectors are widely used in optical imaging, optical communication, automatic control, biochemical sensing and other fields. Therefore, it is of great significance to develop photodetectors with superior performance. Semiconductor photodetectors can be classified into photoconductive detectors, photodiodes and phototransistors. Currently, photodetectors based on semiconductor materials such as silicon, germanium, indium, galliumarsenide, and galliumnitride are widely used in commercial products to...
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