Temperature sensor, electrode and temperature sensitive film connecting structure and preparation method

A connection structure and electrode structure technology, which is applied to the connection structure of the electrode and the temperature-sensitive film in the resistive deep-low temperature sensor and its preparation field, can solve the problems of large measured value, decreased sensor sensitivity, increased oxidation, etc., to improve the effective The effect of resistance output, improving the accuracy of test temperature and reducing test error

Inactive Publication Date: 2019-08-20
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After such a process, the surface of the sensitive film is easily oxidized, and the composition structure changes, which leads to an increase in oxidation and a decrease in nitrides. In this way, the resistance of the surface is measured by the electrode, which makes the measured value larger than the actual value, and the sensitivity of the sensor decreases.

Method used

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  • Temperature sensor, electrode and temperature sensitive film connecting structure and preparation method
  • Temperature sensor, electrode and temperature sensitive film connecting structure and preparation method

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Experimental program
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Effect test

Embodiment 1

[0028] Such as figure 1 As shown in the figure, the figure is a structural schematic diagram of the connection structure between the electrode and the temperature-sensitive film in a resistive deep-low temperature sensor. The figure includes an insulating substrate 1, an electrode 2, and a temperature-sensitive film layer 4, and the electrodes are sequentially arranged on the insulating substrate 1. 2. The temperature sensitive film layer 4 , the electrode transition layer 3 is arranged between the electrode 2 and the temperature sensitive film layer 4 .

[0029] The present invention is different from the traditional process of preparing electrodes on the sensitive film. Firstly, the electrodes are prepared on the insulating substrate, and the temperature sensitive film is prepared on the electrodes. The effective resistance output of the sensitive film reduces the test error and improves the test temperature accuracy of the deep low temperature temperature sensor.

[0030] ...

Embodiment 2

[0042] The material of the insulating base 1 is silicon oxide substrate, the material of the electrode 2 is copper, and the material of the temperature-sensitive film layer 4 is zirconium oxynitride. An electrode transition layer 3 is arranged between the film layers 4 . The material of the electrode transition layer 3 is chromium.

[0043] A flow chart of a method for manufacturing a connection structure between an electrode and a temperature-sensitive film in a resistive deep-low temperature sensor, specifically comprising the following steps:

[0044] (1) Fabricate a patterned electrode on the insulating substrate 1, and its micro-machining process is gelling, photolithography, development, sputtering and lift-off process. Specifically refers to: in the present embodiment, the material of the insulating base 1 is a silicon oxide substrate, such as figure 2 As shown in (a), 5 μm of photoresist I5 is thrown on the insulating substrate 1, and the photoresist I5 is patterned...

Embodiment 3

[0049] The material of the insulating substrate 1 is alumina ceramics, the material of the electrode 2 is gold, and the material of the temperature sensitive film layer 4 is niobium oxynitride. The electrode 2 and the temperature sensitive film layer 4 are arranged in sequence on the insulating substrate 1. An electrode transition layer 3 is arranged between the layers 4 . The material of the electrode transition layer 3 is titanium.

[0050] A flow chart of a method for manufacturing a connection structure between an electrode and a temperature-sensitive film in a resistive deep-low temperature sensor, specifically comprising the following steps:

[0051] (1) Fabricate a patterned electrode on the insulating substrate 1, and its micro-machining process is gelling, photolithography, development, sputtering and lift-off process. Specifically refers to: in the present embodiment, the material of the insulating base 1 is alumina ceramics, such as figure 2 As shown in (a), 5 μm...

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Abstract

The invention relates to a temperature sensor, an electrode and temperature sensitive film connecting structure and a preparation method thereof, the structure comprises an insulating substrate, an electrode and a temperature sensitive film, the electrode is arranged on the insulating substrate, and the temperature sensitive film is arranged on the electrode; wherein an electrode transition layeris arranged between the electrode and the temperature sensitive film, the electrode transition layer is a metal film, and the metal film is any one of molybdenum, chromium and titanium. The value of the sensitive film measured by the electrode is more consistent with the property of the sensitive film, the effective resistance output of the sensitive film can be effectively improved, test errors are reduced, and the test temperature accuracy of the profound hypothermia temperature sensor is improved.

Description

technical field [0001] The invention relates to the technical field of cryogenic temperature sensors, in particular to a connection structure between electrodes and a temperature-sensitive film in a resistive cryogenic temperature sensor and a preparation method thereof. Background technique [0002] Low temperature measurement is widely used in aerospace, biomedical, superconducting electronics, high energy physics, energy and other cutting-edge technology fields, among which resistive deep low temperature temperature sensors play an important role in low temperature measurement. Since the resistive cryogenic temperature sensor measures temperature according to the change characteristics of the resistance of the sensitive film to the temperature change, the performance of the sensitive film material determines the performance of the resistive cryogenic temperature sensor. [0003] In the resistance type deep and low temperature temperature sensor, the zirconium oxynitride f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81C1/00G01K7/16
CPCB81B7/0006B81B2201/0278B81C1/00626G01K7/16
Inventor 刘景全尤敏敏
Owner SHANGHAI JIAO TONG UNIV
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