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Quantum dot cladding method and prepared shell-clad quantum dot

A technology of quantum dots and shell layers, applied in the field of nanomaterial preparation, can solve the problems such as the red shift of the fluorescence emission wavelength of quantum dots and the difficulty in controlling the wavelength of quantum dots, and achieve the effect of high fluorescence quantum yield

Active Publication Date: 2019-08-20
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, the shell coating of quantum dots is usually carried out at a high temperature above 220°C, and the fluorescence emission wavelength of the quantum dots coated in this way will have an obvious red shift phenomenon. making it difficult to control the wavelength of the obtained quantum dots

Method used

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  • Quantum dot cladding method and prepared shell-clad quantum dot
  • Quantum dot cladding method and prepared shell-clad quantum dot

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Embodiment approach

[0042] According to a preferred embodiment of the present application, the method for quantum dot cladding comprises steps:

[0043] S2', at a preset low temperature, adding the first ion precursor to the mixed solution containing quantum dots to form a mixed solution containing quantum dots and the first ion precursor;

[0044] S3', adding the second ion precursor to the mixed liquid containing the quantum dot and the first ion precursor in multiple times, the first ion precursor and the second ion precursor react in multiple times and form a shell on the quantum dot .

[0045] In a preferred embodiment, the method for quantum dot cladding comprises steps:

[0046] S2', at a preset low temperature, adding the first ion precursor to the mixed solution containing quantum dots to form a mixed solution containing quantum dots and the first ion precursor;

[0047] S3', adding an equimolar amount of the second ion precursor to the mixed solution containing the quantum dot and the...

Embodiment 1

[0067] Preparation of quantum dot 1:

[0068] S1. Obtain a mixed solution including InP quantum dots:

[0069] S1-1. Under an inert gas atmosphere, make 1mmol In(OAc) 3 , 1mmol Zn(OAc) 2 , 3mmol oleic acid, 20mL octadecene, and 0.8mmol tris(trimethylsilyl)phosphine were mixed, heated and reacted to prepare InP quantum dots;

[0070] S1-2. Precipitate and purify the above-mentioned InP quantum dots using known methods, and disperse the purified InP quantum dots in 10 mL of octadecene solution to obtain a mixed solution including InP quantum dots;

[0071] S2, coating ZnS shell for InP quantum dots:

[0072] S2-1. At 200°C, add 24 mmol of zinc stearate in octadecene solution to the mixed solution including InP quantum dots, and react for 60 minutes;

[0073] S2-2. Add 8 mmol sulfur tri-n-octylphosphine solution to the reaction system of S2-1, and react for 30 minutes;

[0074] S2-3. Repeating step S2-2 for a total of 3 times to coat the InP quantum dots with a ZnS shell lay...

Embodiment 2

[0076] Preparation of quantum dot 2:

[0077] S1. Obtain a mixed solution including InP quantum dots:

[0078] Under an inert gas atmosphere, make 1mmol In(OAc) 3 , 1mmol Zn(OAc) 2 , 3mmol oleic acid, 20mL octadecene, and 0.8mmol tris(trimethylsilyl)phosphine were mixed, heated and reacted to obtain a mixed solution including InP quantum dots;

[0079] S2. Coating ZnSe / ZnS shells for InP quantum dots:

[0080] S2-1. At 180°C, add 24 mmol of zinc stearate in octadecene solution to the mixed solution including InP quantum dots, and react for 60 minutes;

[0081] S2-2. Add 4 mmol of selenium tri-n-octylphosphine solution to the reaction system of S2-1, react for 60 minutes, then add 4 mmol of selenium tri-n-octylphosphine solution, and react for 60 minutes to coat the ZnSe subshell for InP quantum dots layer;

[0082] S2-3. Add 8 mmol of sulfur tri-n-octylphosphine solution to the reaction system of S2-2, react for 60 minutes, then add 8 mmol of sulfur tri-n-octylphosphine s...

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Abstract

The invention provides a quantum dot cladding method. The quantum dot cladding method comprises the following steps: adding a first ion precursor to a mixed solution containing a quantum dot at a preset low temperature to form a mixed solution containing the quantum dot and the first ion precursor, and then adding a second ion precursor to the mixed solution to form a shell on the quantum dot, wherein a dosage of the second ion precursor is smaller than that of the first ion precursor based on amount of substance. The method disclosed in the invention is characterized in that the cladding of ashell on a quantum dot is carried out at a low temperature, and a proper ion precursor feeding manner is selected so that the position of the fluorescence-emission peak of the quantum dot is less influenced by the cladding of the shell on the quantum dot, thus effectively controlling the fluorescence emission wavelength of the quantum dot.

Description

technical field [0001] The application belongs to the technical field of nanomaterial preparation, and in particular relates to a quantum dot coating method and the prepared quantum dot with shell coating. Background technique [0002] Quantum dots have excellent optical properties such as adjustable emission peak position, high fluorescence quantum efficiency, and pure spectrum. They have good application prospects in the fields of display, lighting, life science, and fluorescent labeling. They are currently one of the most promising nanomaterials. one. [0003] Surface defects in quantum dots increase the chance of non-radiative transitions, which adversely affect their luminescent properties. In order to solve this problem, a shell layer is generally coated on the surface of quantum dots to enhance their luminous efficiency. However, in the prior art, the shell coating of quantum dots is usually carried out at a high temperature above 220°C, and the fluorescence emissio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70C09K11/88B82Y20/00B82Y40/00
CPCC09K11/703C09K11/88B82Y20/00B82Y40/00
Inventor 单玉亮邝青霞曹越峰杨涵妮王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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