Glue-free Transfer Method for Fabricating Monolayer Transition Metal Chalcogenide Longitudinal Heterojunctions

Abstract

The invention discloses a method for preparing longitudinal heterojunctions of single-layer transition metal chalcogenides by no-glue transfer. Firstly, fused salt is mixed with transition metal oxide powder as an evaporation source; and transition metal chalcogenides are prepared through growth of the fused salt assisted by a chemical vapor deposition method. Then, de-ionized water is used, and is contacted with the transition metal chalcogenides; the transition metal chalcogenides can float along with water; through flowing of the water, the transition metal chalcogenides are transferred to any target substrate; and the longitudinal heterojunctions and multiple layers of stacked longitudinal heterojunctions are prepared through multiple times of transfer of the transition metal chalcogenides. Any organic glue is not used as a middle auxiliary layer, so that the problem of glue remaining can be solved; and any corrosive solution cannot be used, so that the destruction and the doping of the corrosive solution to the transition metal chalcogenides can be prevented, a new method is provided for transfer of the transition metal chalcogenides and preparation of the longitudinal heterojunctions thereof, and the important significance on acceleration of the research and the application of the transition metal chalcogenides and the longitudinal heterojunctions thereof is achieved.

Description

technical field

[0001] The invention relates to indicators of direct bandgap semiconductor materials, in particular to a method for preparing a vertical heterojunction of a single-layer transition metal chalcogenide by non-adhesive transfer. Background technique

[0002] As a single-layer transition metal chalcogenide is a direct bandgap semiconductor material, it has important application prospects in energy devices, chemical catalysis, and optoelectronic devices. Combining two or more single-layer transition metal chalcogenides to form a vertically structured heterojunction, the change in the interaction between vertical heterojunctions will provide a new degree of freedom for the exploration of new physical properties of transition metal chalcogenides , to provide new ideas for the design of new electronic devices. Chemical vapor deposition (Chemical vapor deposition, CVD) is the most common method for preparing single-layer transition metal chalcogenides. It is easy to ...

Examples

Embodiment 1

[0046] Example 1, MoS is prepared by chemical vapor deposition 2 as an example.

[0047] Place 100mg of sulfur powder in the first quartz boat 15, place 0.5mg of transition metal oxide powder and molten salt powder mixture in the second quartz boat 13, the transition metal oxide selected in this embodiment is MoO 3 , the usage amount is about 0.3 mg, the selected molten salt is NaCl, and the usage amount is about 0.2 mg. 14 is the growth film substrate, that is, the substrate used in the growth and preparation of transition metal chalcogenides by chemical vapor deposition. In this embodiment, SiO 2 / Si as the substrate. Place the two quartz boats in the quartz tube 11 lined with the tube furnace insulation material 12, place them in the tube furnace, and heat them to 650°C through the tube furnace, so that the powder in the quartz boats is heated and evaporated into the gas phase, and then Under the transport of the carrier gas Ar, the evaporated gas phases are mixed and ch...

Embodiment 2

[0049] Example 2, MoSe is prepared by chemical vapor deposition 2 as an example.

[0050] 50mg of selenium powder is placed in the first quartz boat 15, and 1.5mg of transition metal oxide powder and molten salt powder mixture is placed in the second quartz boat 13. The transition metal oxide selected in this embodiment is MoO 3 , the usage amount is about 1.0 mg, the selected molten salt is NaCl, and the usage amount is about 0.5 mg. 14 is the growth film substrate, that is, the substrate used in the growth and preparation of transition metal chalcogenides by chemical vapor deposition. In this embodiment, glass is used as the substrate. Place the two quartz boats in the quartz tube 11 lined with the tube furnace insulation material 12, place them in the tube furnace, and heat them to 900°C through the tube furnace, so that the powder in the quartz boats is heated and evaporated into the gas phase. Carrier gas Ar / H 2 Under the transport, the evaporated gas phase is mixed an...

Embodiment 3

[0052] Embodiment 3, prepare WS with chemical vapor deposition 2 as an example.

[0053] Place 300mg of sulfur powder in the first quartz boat 15, place 15mg of transition metal oxide powder and molten salt powder mixture in the second quartz boat 13, the transition metal oxide selected in this embodiment is WO 3 , the usage amount is about 10 mg, the selected molten salt is NaI, and the usage amount is about 5 mg. 14 is the growth film substrate, that is, the substrate used in the growth and preparation of transition metal chalcogenides by chemical vapor deposition. In this embodiment, SiO 2 / Si as the substrate. Place the two quartz boats in the quartz tube 11 lined with the insulation material 12 of the tube furnace, place them in the tube furnace, and heat them to 850°C through the tube furnace, so that the powder in the quartz boats is heated and evaporated into the gas phase. Carrier gas Ar / H 2 Under the transport, the evaporated gas phase mixes and undergoes a chemi...

technical field

[0001] The invention relates to indicators of direct bandgap semiconductor materials, in particular to a method for preparing a vertical heterojunction of a single-layer transition metal chalcogenide by non-adhesive transfer. Background technique

[0002] As a single-layer transition metal chalcogenide is a direct bandgap semiconductor material, it has important application prospects in energy devices, chemical catalysis, and optoelectronic devices. Combining two or more single-layer transition metal chalcogenides to form a vertically structured heterojunction, the change in the interaction between vertical heterojunctions will provide a new degree of freedom for the exploration of new physical properties of transition metal chalcogenides , to provide new ideas for the design of new electronic devices. Chemical vapor deposition (Chemical vapor deposition, CVD) is the most common method for preparing single-layer transition metal chalcogenides. It is easy to ...

Examples

Embodiment 1

[0046] Example 1, MoS is prepared by chemical vapor deposition 2 as an example.

[0047] Place 100mg of sulfur powder in the first quartz boat 15, place 0.5mg of transition metal oxide powder and molten salt powder mixture in the second quartz boat 13, the transition metal oxide selected in this embodiment is MoO 3 , the usage amount is about 0.3 mg, the selected molten salt is NaCl, and the usage amount is about 0.2 mg. 14 is the growth film substrate, that is, the substrate used in the growth and preparation of transition metal chalcogenides by chemical vapor deposition. In this embodiment, SiO 2 / Si as the substrate. Place the two quartz boats in the quartz tube 11 lined with the tube furnace insulation material 12, place them in the tube furnace, and heat them to 650°C through the tube furnace, so that the powder in the quartz boats is heated and evaporated into the gas phase, and then Under the transport of the carrier gas Ar, the evaporated gas phases are mixed and ch...

Embodiment 2

[0049] Example 2, MoSe is prepared by chemical vapor deposition 2 as an example.

[0050] 50mg of selenium powder is placed in the first quartz boat 15, and 1.5mg of transition metal oxide powder and molten salt powder mixture is placed in the second quartz boat 13. The transition metal oxide selected in this embodiment is MoO 3 , the usage amount is about 1.0 mg, the selected molten salt is NaCl, and the usage amount is about 0.5 mg. 14 is the growth film substrate, that is, the substrate used in the growth and preparation of transition metal chalcogenides by chemical vapor deposition. In this embodiment, glass is used as the substrate. Place the two quartz boats in the quartz tube 11 lined with the tube furnace insulation material 12, place them in the tube furnace, and heat them to 900°C through the tube furnace, so that the powder in the quartz boats is heated and evaporated into the gas phase. Carrier gas Ar / H 2 Under the transport, the evaporated gas phase is mixed an...

Embodiment 3

[0052] Embodiment 3, prepare WS with chemical vapor deposition 2 as an example.

[0053] Place 300mg of sulfur powder in the first quartz boat 15, place 15mg of transition metal oxide powder and molten salt powder mixture in the second quartz boat 13, the transition metal oxide selected in this embodiment is WO 3 , the usage amount is about 10 mg, the selected molten salt is NaI, and the usage amount is about 5 mg. 14 is the growth film substrate, that is, the substrate used in the growth and preparation of transition metal chalcogenides by chemical vapor deposition. In this embodiment, SiO 2 / Si as the substrate. Place the two quartz boats in the quartz tube 11 lined with the insulation material 12 of the tube furnace, place them in the tube furnace, and heat them to 850°C through the tube furnace, so that the powder in the quartz boats is heated and evaporated into the gas phase. Carrier gas Ar / H 2 Under the transport, the evaporated gas phase mixes and undergoes a chemi...

Images