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Multi-functional spin orbit torque device with full electric control and preparation method thereof

A technology of spin-orbit and spin-orbit coupling, which is applied in the field of spintronics, can solve the problems of increasing the complexity of device design, miniaturization of device power consumption, etc., and achieve good interface flatness and lattice matching, high tunneling The effect of the magneto resistance ratio and high thermal stability

Active Publication Date: 2019-09-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the multifunctionality of most spin-orbit torque devices cannot be achieved without the assistance of an external magnetic field, which increases the complexity of device design, device power consumption, and the difficulty of device miniaturization.

Method used

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  • Multi-functional spin orbit torque device with full electric control and preparation method thereof
  • Multi-functional spin orbit torque device with full electric control and preparation method thereof
  • Multi-functional spin orbit torque device with full electric control and preparation method thereof

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preparation example Construction

[0051] In the first exemplary embodiment of the present disclosure, a method for preparing a fully electrically regulated multifunctional spin-orbit torque device is also provided. figure 2 It is a flow chart of the preparation method of the all-electrically regulated multifunctional spin-orbit torque device according to the embodiment of the present invention. Such as figure 2 shown, including:

[0052] Put the semi-insulating GaAs(001) substrate into the MBE preparation chamber, and the vacuum degree of the chamber is higher than 2×10-7Pa. After degassing and deoxidation, the temperature of the substrate was raised to 560° C., and a GaAs smooth layer was deposited with a growth rate of 10 nm / min and a thickness of 200 nm.

[0053] Lower the temperature of the substrate to 150-250°C to grow a ferrimagnetic binary alloy D0 with perpendicular magnetic anisotropy 22 -Mn 3 Ga, with a growth rate of about 1nm / min and a thickness of 40nm, raised to 300°C and kept for 20min to...

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Abstract

The invention provides a multi-functional spin orbit torque device with full electric control. The device sequentially includes a substrate, a smoothing layer, a vertical easy magnetization layer, a heavy metal layer, an in-plane easy magnetization layer and a covering layer, wherein a material of the vertical easy magnetization layer is perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including one or more of L10-MnGa, L10-MnAl, D022-Mn3Ga or D022-Mn3Ge, the vertical easy magnetization layer has thickness of 1-4 nm, and the easy magnetization axis of the vertical easy magnetization layer is in the out-of-plane direction. The device is advantaged in that under the condition of no external magnetic field, not only can torque overturning of the spin orbit with all electric control be realized, characteristics of low power consumption, multiple functions and high reliability are achieved, but also characteristics of high response speed, long life, high thermal stability and multiple functions are achieved, the device is quite suitable for developing high speed spin memory devices and programmable spin logic devices.

Description

technical field [0001] The present disclosure relates to the field of spin electronics, in particular to an all-electrically regulated multifunctional spin-orbit torque device and a preparation method. Background technique [0002] The spin-orbit torque (SOT) effect provides a new mechanism to efficiently control the magnetic moment at the micro-nano scale through an all-electrical method, which brings new opportunities for the development of next-generation low-power and non-volatile spintronic devices. opportunity. For example, magnetic random access memory (MRAM) based on the SOT effect can realize all-electrical data writing and reading, and has the advantages of non-volatility, high response speed, high density, high stability and strong process compatibility. Compared with traditional magnetic drive type and spin transfer torque (STT) type MRAM, it has great advantages. In addition, the spin-orbit torque device has remarkable multifunctional characteristics, which is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/04H01L43/06H01L43/14H10N52/80H10N52/00H10N52/01
CPCH10N52/80H10N52/00H10N52/01
Inventor 赵旭鹏赵建华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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