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A kind of Cu-doped SNSE semiconductor thin film and electrochemical preparation method thereof

A semiconductor and electrochemical technology, applied in the field of Cu-doped SnSe semiconductor thin film and its electrochemical preparation, can solve problems such as limitations, achieve the effect of avoiding cracks and holes, suitable for large-scale industrial production, and high carrier concentration

Active Publication Date: 2020-12-25
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, whether it is single crystal or polycrystalline SnSe as a thermoelectric material, the industrial application is limited.

Method used

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  • A kind of Cu-doped SNSE semiconductor thin film and electrochemical preparation method thereof
  • A kind of Cu-doped SNSE semiconductor thin film and electrochemical preparation method thereof
  • A kind of Cu-doped SNSE semiconductor thin film and electrochemical preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] (1) Preparation of electrodeposition solution: Weigh 0.90g of disodium EDTA, 0.45g of SnCl in turn 2 ·2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, CuCl 2 ·5H 2 O, dissolve it in 200ml of deionized water after deaeration, stir evenly, and adjust the pH to 2.6 with 0.1M dilute hydrochloric acid.

[0041] (2) Electrodeposition: the solution prepared in step (1) is used as the electrolyte, the pretreated ITO glass is used as the working electrode, the saturated calomel electrode is used as the reference electrode, and the platinum sheet is used as the auxiliary electrode. Connect it to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum plate is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Cu-doped SnSe The pre-deposited film was used to test the chemical composition of the film with an Oxford INCA-Penta-FET-X3 X-ray ene...

Embodiment 2

[0044] (1) Preparation of electrodeposition solution: Weigh 0.90g of disodium EDTA, 0.45g of SnCl in turn 2 ·2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, CuCl 2 ·5H 2 O, the addition amount of urea is 10mg / L, it is dissolved in 200ml of deionized water after deaeration and evenly stirred, and the pH is adjusted to 2.6 with 0.1M dilute hydrochloric acid.

[0045] (2) Electrodeposition: the solution prepared in step (1) is used as the electrolyte, the pretreated ITO glass is used as the working electrode, the saturated calomel electrode is used as the reference electrode, and the platinum sheet is used as the auxiliary electrode. Connect it to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum plate is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Cu-doped SnSe The pre-deposited film was used to test the chemical composition ...

Embodiment 3

[0048] (1) Preparation of electrodeposition solution: Weigh 0.90g of disodium EDTA, 0.45g of SnCl in turn 2 ·2H 2 O, 0.13g Na 2 SeO 3 ·5H 2 O, CuCl 2 ·5H 2 O, the addition amount of sodium dodecyl sulfonate is 10mg / L, dissolve it in 200ml of deionized water after deoxygenation, stir evenly, and adjust the pH to 2.6 with 0.1M dilute hydrochloric acid.

[0049] (2) Electrodeposition: the solution prepared in step (1) is used as the electrolyte, the pretreated ITO glass is used as the working electrode, the saturated calomel electrode is used as the reference electrode, and the platinum sheet is used as the auxiliary electrode. Connect it to the corresponding terminal button of the potentiostat, ensure that the distance between the working electrode and the platinum plate is 3cm, and ensure that the temperature of the electrolyte is between 15°C and 40°C, and the deposition time is 20min-60min to obtain Cu-doped SnSe The pre-deposited film was used to test the chemical comp...

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Abstract

The invention relates to a Cu-doped SnSe semiconductor film and an electrochemical preparation method thereof. Copper chloride, stannous chloride and sodium selenite are selected as copper, tin and selenium sources, ethylenediamine tetraacetic acid disodium salt serves as a complexing agent, and urea and sodium dodecyl sulfate serve as an additive to prepare electrolyte; after a pH value of a plating solution is adjusted to be 1.5-5, electro-deposition is performed at a room temperature to obtain a Cu-doped SnSe pre-deposited film; and then the SnSe pre-deposited film is subjected to annealing so that the Cu-doped SnSe semiconductor film can be obtained. Due to the method, the Cu-doped SnSe semiconductor film free of an impurity phase can be prepared, the carrier concentration, the migration rate and the conductivity of the film are high, and the thermoelectric performance of the Cu-doped SnSe semiconductor film can be improved easily. Due to the preparation method, chemical components and the electric transmission performance of the Cu-doped SnSe semiconductor film can be controlled through electrolyte components, a deposition process and an annealing method, the beneficial effects that controllability is high and repeatability is good are achieved, and the preparation method is applicable to large-area preparation.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, in particular to a Cu-doped SnSe semiconductor thin film and an electrochemical preparation method thereof. Background technique [0002] Thermoelectric materials can directly convert thermal energy into electrical energy, and have a wide range of research and applications in the fields of waste heat utilization, power generation devices, and temperature measurement. The early thermoelectric materials are mainly metal materials, but the limitations of metal materials are very obvious. Their Seebeck coefficients are low, but their thermal conductivity is often high, which also leads to their low thermoelectric figure of merit, which is difficult to meet the industrial requirements for thermoelectricity. material requirements. In the late 1950s, Abram Ioffe discovered that semiconductor materials have significantly superior thermoelectric conversion effects compared to metal materials, so m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D9/04C30B28/04C30B29/46C30B33/02
CPCC25D9/04C30B28/04C30B29/46C30B33/02
Inventor 李志林王峰曹凯刘景军吉静张正平窦美玲宋夜
Owner BEIJING UNIV OF CHEM TECH
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