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Electromigration test structure and method

A technology of test structure and test method, applied in the direction of semiconductor/solid-state device test/measurement, circuits, electrical components, etc., can solve the problems of uniform heating of test metal wires, difficulty in providing target test temperature, etc., and achieve the effect of efficient conduction

Active Publication Date: 2021-07-16
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an electromigration test structure and method to solve the problems in the prior art that it is difficult to provide the target test temperature and the test metal wire cannot be evenly heated when conducting the electromigration test

Method used

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  • Electromigration test structure and method
  • Electromigration test structure and method

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Embodiment Construction

[0040] As described in the background, when a polysilicon wire is used for electromigration test, the polysilicon heater is typically disposed at the bottom layer, and the temperature of the actual test metal wire is obtained due to the heat insulating effect of the interlayer medium and the dissipation effect of the heat transfer process. The temperature generated by the polysilicon heater is not equal, and the heat-insulating temperature of the tested metal wire and the bottom of the test metal will also have significant differences.

[0041] For example, if figure 1 As shown in the prior art, a current is applied to the polysilicon wire Poly, so that the polysilicon wire poly generates a heating temperature of 300 ° C, due to the heat insulation effect of the interlayer medium and the dissipation of heat transfer, when the metal test is reached At the bottom of the line, the heating temperature may be reduced to 280 ° C, while when the top of the metal test line is reached, the...

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Abstract

The present invention provides an electromigration test structure and method, using a polysilicon heater to generate heat to provide a temperature for performing an electromigration test on a test metal line, and using a heat conduction structure to conduct the heat generated by the polysilicon heater to the The surroundings of the test wire are tested to uniformly heat the test wire. Compared with the prior art, since the heat conduction structure can efficiently conduct the heat generated by the polysilicon heater and conduct it to the surroundings of the test metal wire, the heated temperatures of different parts of the test metal wire are uniform. Can be consistent with the target heating temperature.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly to an electromigration test structure and method. Background technique [0002] With the advancement of technical nodes, the reliability assessment of electromigration is increasingly important. The usual electromigration test is tested using a sample of the package. Specifically, the wafer scrubbing, cutting the chip and package, providing high temperatures with a furnace. The advantage of the package-level test is that a large number of samples can be tested, and the statistical analysis is used to obtain electric migration life. However, the disadvantage of this method is that the utilization rate of the chip is low, and the cutting package can have an impact on the test structure, and the whole The process is time consuming. Another constant thermal electrical migration test method can be tested directly on the wafer without a slice package, which is tested by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/14H01L22/22H01L22/30H01L22/32
Inventor 范庆言曹巍陈雷刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP