Atomic layer deposition equipment and gas transmission method

An atomic layer deposition and gas transmission technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve problems such as vacuum pump stuck, improve reliability and life, reduce the risk of stuck Effect

Active Publication Date: 2019-10-29
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to provide an atomic layer deposition equipment and gas transmission method to solve the problem in the prior art that various precursor precursors react in the vacuum pump to form powder, causing the vacuum pump to be stuck

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  • Atomic layer deposition equipment and gas transmission method
  • Atomic layer deposition equipment and gas transmission method
  • Atomic layer deposition equipment and gas transmission method

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Embodiment Construction

[0049] The present invention proposes a method for realizing a novel atomic layer deposition process, which sets a cooling pipeline to condense precursors flowing through the pipeline and stores them in the pipeline to prevent multiple precursors from entering the vacuum pump at the same time.

[0050] The present invention will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0051] image 3 An atomic layer deposition apparatus according to an exemplary embodiment of the present invention is shown. like image 3 As shown, the atomic layer deposition equipment in...

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Abstract

The invention discloses atomic layer deposition equipment and a gas transmission method. The equipment comprises a bypass pipeline and a cooling pipeline, wherein the cooling pipeline is used for condensing and storing at least one precursor, the bypass pipeline and the cooling pipeline are connected in parallel and then are connected between precursor input ends and precursor output ends, and theprecursor input ends selectively communicates with the bypass pipeline or the cooling pipeline. According to the atomic layer deposition equipment, the cooling pipeline is arranged to condense the precursor flowing through the pipeline, and the precursor is stored in the pipeline, so that a plurality of precursors are prevented from entering a vacuum pump at the same time, powder caused by reaction of multiple precursors in the vacuum pump is reduced, the risk that the vacuum pump is stuck due to powder accumulation is reduced, and the operation reliability and the service life of the vacuumpump are improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an atomic layer deposition device and a gas transmission method. Background technique [0002] Atomic layer deposition (ALD) technology is a method that can coat substances layer by layer on the surface of a substrate in the form of a single atomic film. In the process of atomic layer deposition, the chemical reaction of a new layer of atomic film is directly related to the previous layer. In this way, only one layer of atoms is deposited in each reaction, that is, monoatomic layer deposition, also known as atomic layer epitaxy ( atomic layer epitaxy). At first, due to the low deposition rate of this process, its application was limited, but with the development of microelectronics and deep submicron chip technology, the size of devices and materials is continuously reduced, and the aspect ratio of devices is increasing. Atomic layer deposition techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45527C23C16/45544C23C16/52
Inventor 徐宝岗
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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