InGaN multi-quantum well light emitting diode

Abstract

The invention discloses an InGaN multi-quantum well light emitting diode, which comprises a substrate, an N-type doped GaN layer formed on the surface of the substrate, an InGaN / GaN multi-quantum welllight emitting layer formed on the surface of the N-type doped GaN layer, an electron blocking layer formed on the surface of the InGaN / GaN multi-quantum well light emitting layer, a P-type doped GaNlayer formed on the surface of the electron blocking layer, a first electrode arranged on the surface of the P-type doped GaN layer and a second electrode arranged on teh surface of the N-type dopedGaN layer, wherein the electron blocking layer comprises a P-type doped InyGa1-yN layer and a P-type doped AlxGa1-xN layer; the In content y in the InyGa1-yN layer is a fixed value; and the Al contentin the AlxGa1-xN layer is linearly increased along a growth direction and is determined by a formula x=a*z / d1, a is the maximum Al content in a second electron blocking layer, z is the bottom distance of the second electron blocking layer, and d1 is the thickness of the second electron blocking layer. Leakage current can be reduced, the hole injection efficiency is increased, and the light emitting efficiency of products is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting diodes, in particular to an indium gallium nitride (InGaN) multi-quantum well light emitting diode. Background technique [0002] Since the 1990s, with a series of major breakthroughs in the growth process of gallium nitride (GaN)-based semiconductor materials, the third-generation semiconductor materials represented by gallium nitride have gradually emerged. As a new type of high-efficiency solid-state light source, gallium nitride-based semiconductor materials have the characteristics of long life, energy saving, and environmental protection. They are widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, optical communications and other fields. In gallium nitride-based multiple quantum well light-emitting diodes currently on the market, a P-type doped AlGaN layer is generally used as an electron blocking layer. Wherein, the c...

AI Technical Summary

Problems solved by technology

The problem with this technical solution is that there are spontaneous polarization and piezoelectric polarization effects in GaN-based semiconductor devices, and strong polarization charges are generated at the interfaces of gallium nitride-based multi-quantum well light-emitting diodes. As a result, the energy bands of each layer are inclined, especially the energy band at the interface between the multi-quantum well and the electron blocking layer is inclined downward, which not only reduces the effective barrier height of the electron blocking layer to electrons, but also cannot effectively confine electrons, resulting in a large amount of leakage current , but also increases the effective barrier height of the electron blocking layer to holes, further restricts the injection of holes from the P-type GaN layer to the multi-quantum well region, and reduces the hole injection efficiency

This also leads to a gradual decrease in the luminous efficiency of GaN-based semiconductor light-emitting diodes as the injection current increases.

This phenomenon seriously restricts the application of GaN-based semiconductor light-emitting diodes as high-brightness and high-power devices in the field of lighting.

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