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Wafer defect marking device and wafer defect marking method

A technology of defect marking and defect location, which is applied in semiconductor/solid-state device components, semiconductor/solid-state device testing/measurement, semiconductor devices, etc., can solve the problems of difficult to distinguish marks, mark fading, and difficult marking of wafers, etc., and achieve the best results Good, avoid pollution, the process of marking is simple and convenient effect

Active Publication Date: 2021-07-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The object of the present invention is to provide a wafer defect marking device and a wafer defect marking method, so as to solve the problems existing in marking wafers such as difficulty in marking, fading of marks or difficulty in distinguishing marks, etc.

Method used

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  • Wafer defect marking device and wafer defect marking method
  • Wafer defect marking device and wafer defect marking method
  • Wafer defect marking device and wafer defect marking method

Examples

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Embodiment Construction

[0072] The core idea of ​​the present invention is to provide a wafer defect marking device, which is used for marking defect positions in the wafer to be tested. The wafer defect marking device includes:

[0073] a main chamber with a scanning marking area;

[0074] a scanning marking system, which is arranged corresponding to the scanning marking area and includes a scanning electron microscope assembly and a laser marking assembly; and,

[0075] The first sample stage is movably arranged in the main chamber and is used to carry the wafer to be tested;

[0076] Wherein: when the first sample stage moves to the scanning mark area, the scanning electron microscope assembly is used to scan and detect the wafer to be measured on the first sample stage to obtain the The defect position of the wafer to be tested, and then the laser marking component is used to emit laser light to the defect position of the wafer to be tested, so as to etch the defect position of the wafer to be ...

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Abstract

The invention relates to a wafer defect marking device and a wafer defect marking method, which are used for marking the defect position of the wafer to be tested, so as to facilitate subsequent analysis of the defect. The invention produces the mark by using the laser to etch the wafer to be tested, and has the advantages of simple mark and permanent retention.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer defect marking device and a wafer defect marking method. Background technique [0002] In the wafer production process of large-scale integrated circuits, it is necessary to slice and analyze the defects existing on the wafer at each process node in time to explore the mechanism of defect generation. [0003] For the slice analysis of wafer defects, the first step is to use a focused ion beam microscope for sample preparation. At present, there are mainly two types of focused ion beam microscopes for sample preparation in the industry: one is a high-precision focused ion beam microscope, and the other is a non-fragmented wafer focused ion beam microscope. The sample stage of the high-precision focused ion beam microscope is too small to operate on the entire wafer, and the wafer needs to be broken manually in advance, which undoubtedly increases the d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/66H01L23/544
CPCH01L21/67282H01L22/12H01L23/544H01L2223/5444
Inventor 陈肖宋箭叶
Owner SHANGHAI HUALI MICROELECTRONICS CORP