Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-voltage MOSFET driving circuit

A driving circuit and high-voltage technology, applied in high-efficiency power electronic conversion, electrical components, output power conversion devices, etc., can solve problems such as high-voltage leakage control power supply difficulties, achieve shortened development cycle, fast switching speed, and avoid mutual interference Effect

Active Publication Date: 2019-11-05
SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the defects in the prior art, the purpose of the present invention is to provide a high-voltage MOSFET drive circuit to solve the problem of difficult power supply of high-voltage leakage control of gallium nitride high-power transistors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage MOSFET driving circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0041] see figure 1 , a high-voltage MOSFET drive circuit, including a MOSFET module, a MOSFET drive module, an optocoupler module, and an LDO module.

[0042] The MOSFET module is connected with the MOSFET driver module; the optocoupler module is connected with the LDO module, and both are connected with the MOSFET driver module; wherein:

[0043] The optocoupler module includes: a first resistor R1, a second resistor R2, and an optocoupler N1; the first end of the first resistor R1 is connected to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a high-voltage MOSFET driving circuit including a MOSFET module, a MOSFET driving module, an optocoupler module, and an LDO module. The MOSFET module is connected to theMOSFET driving module. The optocoupler module is connected to the LDO module, and both the optocoupler module and the LDO module are connected to the MOSFET driving module. The optocoupler module comprises a first resistor, a second resistor and an optocoupler. The LDO circuit includes a fourth resistor, a fifth resistor, a sixth resistor, a sixth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, a first diode, and a low dropout linear regulator. The problem that the high-voltage leakage control power supply difficulty of a gallium nitride tube is solved, the high-voltage MOSFET driving circuit is suitable for the leakage control requirement of TR components of a plurality of radar models and has strong driving ability, fast switching speed and good reliability, andthe development cycle of a product can be significantly shortened.

Description

technical field [0001] The invention belongs to the technical field of power supply management, and in particular relates to a high-voltage MOSFET driving circuit, which is applied to power supply for active phased array radar array antenna TR components. Background technique [0002] High-voltage MOSFET drive circuits are generally used in the power supply of antenna components of active phased array radars. In order to meet the radar’s miniaturization, low cost and high power requirements, a new TR component design scheme is proposed, using gallium nitride high-power transistors , thus a new high-voltage leakage control circuit is proposed, which works in pulse mode. [0003] In the prior art, the general power supply voltage of the MOSFET module and the MOSFET driver module is a low-voltage mode. If a high-voltage power supply is used, the MOSFET module and the MOSFET driver module will be burned out and cannot work normally (generally, as long as it is greater than 18v ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M1/08
CPCH02M1/08Y02B70/10
Inventor 黄晓燕王正之顾国帅杨徐路白璐陈辉张兢晶
Owner SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com