Full-quaternary silicon-based C-band semiconductor laser

Abstract

The present invention provides a full-quaternary silicon-based C-band semiconductor laser. The full-quaternary silicon-based C-band semiconductor laser comprises a silicon substrate, a side negative electrode forming an external negative power source introducing port and an N-type doped silicon material region are arranged side by side on the silicon substrate, the N-type doped silicon material region is provided with three layers of Ge / Si quantum wells, the three layers of Ge / Si quantum wells are provided with ridge waveguide structures, the ridge waveguide structures are provided with upperside positive electrodes forming the external positive power source introducing ports through connection. The full-quaternary silicon-based C-band semiconductor laser solves the problem that the lightsource and the CMOS process are not compatible in the silicon-based photoelectron integration field in the prior art. The light source of the full-quaternary silicon-based C-band semiconductor lasercan achieve the direct growth of the light source on the silicon wafer to omit the step of a traditional bonding light source and reduce the manufacturing difficulty and cost of the photoelectron integration. The full-quaternary silicon-based C-band semiconductor laser can work at room temperature.

Description

technical field [0001] The present invention relates to a semiconductor laser. In particular, it relates to an all-four-group silicon-based C-band semiconductor laser. Background technique [0002] With the continuous development of information technology in modern society, people's performance requirements for communication lines are also increasing day by day. Silicon-based optical interconnection technology has attracted widespread attention because of its advantages such as low delay time, low heat dissipation power, high bandwidth, and high-speed read rate compared with traditional electrical interconnection methods. At present, in addition to silicon-based light sources, other silicon-based optoelectronic devices (such as silicon-based optical waveguides, silicon-based gratings, silicon-based modulators, silicon-based demodulators, and silicon-based photodetectors) have been realized, and the realization can be compared with Silicon-based light sources compatible wit...

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Problems solved by technology

Group IV semiconductor materials without material modification are indirect bandgap semiconductor materials, and their luminous efficiency is very low when they act on the active region of semiconductor lasers, which cannot meet the requirements of communication light sources

At present, the research on group four semiconductors is still in the research of material modification, and a complete set of design schemes for all group four silicon-based semiconductor lasers has not been provided, nor has it been optimized from the perspective of device structure to improve the working efficiency of the device. and stability

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