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Mosfet and power conversion circuit

A technology of positive charge density and area, applied in circuits, output power conversion devices, electrical components, etc., can solve problems such as large changes in switching characteristics

Active Publication Date: 2019-11-12
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010]However, in the conventional MOSFET900, once the charge balance around the gate fluctuates, the switching characteristics after turn-off (Turn off) fluctuate greatly. question

Method used

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  • Mosfet and power conversion circuit
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  • Mosfet and power conversion circuit

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0081] 1. Configuration and operation of the power conversion circuit 1 according to the first embodiment

[0082] The power conversion circuit 1 according to the first embodiment is a chopper circuit as a component such as a DC-DC converter or an inverter. The power conversion circuit 1 involved in the first embodiment, such as figure 1 As shown, it includes: a reactor 10 ; a power supply 20 ; a MOSFET 100 and a rectifying element 30 related to the first embodiment.

[0083] The reactor 10 is a passive element capable of storing energy in a magnetic field formed by passing an electric current.

[0084] The power supply 20 is a DC power supply that supplies current to the reactor 10 . MOSFET 100 controls the current supplied to reactor 10 from power supply 20 . Specifically, the MOSFET 100 switches and switches in response to a clock signal applied to the gate electrode of the MOSFET 100 by a drive circuit (not shown). Pass. The specific configuration of MOSFET 100 will ...

Embodiment approach 2

[0282] MOSFET 102 according to Embodiment 2 basically has the same configuration as MOSFET 100 according to Embodiment 1, but differs from MOSFET 100 according to Embodiment 1 in that it does not change the width at a predetermined depth position in the n-type columnar region. w n (x) and the width w at the specified depth position in the p-type columnar region p (x), but changes the positive charge density N d (x) and the density N of negative charges at a specified depth position in the p-type columnar region a (x). That is, the MOSFET 102 involved in the second embodiment is as Figure 12 As shown, take the depth x as the horizontal axis, and take the density N of positive charges at a specified depth position in the n-type columnar region 114 d (x) and the density N of negative charges at a specified depth position in the p-type columnar region 116 a When (x) is the vertical axis, the density N of the positive charge d (x) exhibits a convex monotonous upward curve to...

Embodiment approach 3

[0294] MOSFET 200 according to Embodiment 3 basically has the same configuration as MOSFET 100 according to Embodiment 1, but differs from MOSFET 100 according to Embodiment 1 in that it is a trench gate MOSFET rather than a planar gate MOSFET. That is, in the MOSFET 200 related to the third embodiment, the semiconductor substrate 210 is as Figure 21 As shown, it has: a base region 218 formed on the surface of the first main surface of the semiconductor substrate 210, and formed on the entire surface of the p-type columnar region 216 and a part of the surface of the n-type columnar region 214; formed on The surface of the first main surface of the semiconductor base 210, and the n-type surface high-concentration region 219 adjacent to the base region 218 formed on the surface of the n-type columnar region 214, and the surface of the base region 218 In the n-type source region 220, the gate electrode 236 is formed on the surface of the base region 218 sandwiched by the source ...

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Abstract

This MOSFET 100 is characterized by comprising a semiconductor substrate 110 having a super junction structure 117, and a gate electrode 126 formed through a gate insulation film 124 on the first mainsurface side of the semiconductor substrate 110, satisfying the relationship |X0-X0'| < |Xm-Xm'|, wherein Xm' is the depth position at which the mean positive charge density Rho(x) is 0, X0' is the deepest depth position on the surface of the depletion layer on a first main surface side, Xm is the depth position at which the reference mean positive charge density Rho0(x) is 0, and X0 is the deepest depth position in the depletion layer on the first main surface side, in a state in which the total amount of impurities in an n-type column region 114 is different from the total amount of impurities in a p-type column region 116. According to this MOSFET 100, even if there is a charge balance variation in the periphery of a gate, the variation in switching properties when turned off is small.

Description

technical field [0001] The present invention relates to MOSFETs and power conversion circuits. Background technique [0002] Conventionally, a MOSFET having a semiconductor base having a superjunction structure composed of n-type column regions and p-type column regions has been widely known (for example, refer to Patent Document 1). [0003] In this specification, the super junction structure refers to a structure in which n-type columnar regions and p-type columnar regions are alternately and repeatedly arranged when viewed from a predetermined cross section. [0004] Conventional MOSFET900 such as Figure 25 As shown, it is a planar gate (Plane gate) type MOSFET, which includes: a semiconductor substrate 910, with a super junction structure 917 composed of an n-type columnar region 914 and a p-type columnar region 916, formed on the first main The surface of the surface, and the base region 918 formed on the entire surface of the p-type columnar region 916 and a part of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/7802H01L29/7805H01L29/7813H01L29/0634H01L29/0878H01L29/0886H01L29/1608H02M7/48H01L29/0615H02M3/003H01L29/0688H01L29/1095H02M3/156H02M7/537
Inventor 新井大辅北田瑞枝
Owner SHINDENGEN ELECTRIC MFG CO LTD