A ferromagnetic shape memory alloy with nanoeutectic layer structure

A memory alloy and ferromagnetic technology, applied in the field of metal alloys, can solve the problems of high brittleness of memory alloys, and achieve the effects of high toughness, random orientation and uniform distribution.

Active Publication Date: 2020-11-24
GUANGZHOU UNIVERSITY
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Problems solved by technology

[0004] In order to overcome the large problem of Ni-Mn-Sn base Heusler magnetic shape memory alloy brittleness in the prior art, one of the purposes of the present invention is to provide a kind of ferromagnetic shape memory alloy with nano-eutectic layer structure; One of the purposes of the present invention The second is to provide the preparation method of this ferromagnetic shape memory alloy with nano-eutectic layer structure

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  • A ferromagnetic shape memory alloy with nanoeutectic layer structure
  • A ferromagnetic shape memory alloy with nanoeutectic layer structure
  • A ferromagnetic shape memory alloy with nanoeutectic layer structure

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Embodiment

[0038] A ferromagnetic shape memory alloy whose chemical formula is expressed as Ni 51.5 mn 34 Fe 6 sn 8.5 . This Ni 51.5 mn 34 Fe 6 sn 8.5 The ferromagnetic shape memory alloy has a nano-eutectic layer structure, and its preparation method is as follows:

[0039] Clean Ni material, Mn material, Fe material and Sn material with absolute ethanol in an ultrasonic cleaning machine for 5 minutes, dry and set aside;

[0040] According to Ni 51.5 mn 34 Fe 6 sn 8.5 Set the atomic percentage, take 51.5 parts by mass of Ni material, 34 parts by mass of Mn material, 6 parts by mass of Fe material and 8.5 parts by mass of Sn material, and supplement the total mass of metal raw materials (Ni material, Mn material, Fe material and Sn material) 1% Mn material, mixed into the MSM20-7 miniature metal melting furnace;

[0041] Under the protection of the inert gas argon, smelting at 1550°C under 80A melting current 4 times, 2 times on the front and back sides, smelting for 5 minut...

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Abstract

The invention discloses a ferromagnetic shape memory alloy with a nano-eutectic layer structure. The chemical formula of ferromagnetic shape memory alloy can be expressed as Ni 51.5 Mn 40‑x Fe x sn 8.5 , 0<x≤8. The preparation method of the ferromagnetic shape memory alloy with nano-eutectic layer structure includes the following steps: 1) according to Ni 51.5 Mn 34 Fe 6 sn 8.5 The atomic percentage composition of the alloy, the Ni source, the Mn source, the Fe source and the Sn source are mixed and put into a metal melting furnace; 2) Smelting is carried out under the protection of an inert gas to obtain Ni 51.5 Mn 34 Fe 6 sn 8.5 alloy. Ni of the present invention 51.5 Mn 34 Fe 6 sn 8.5 The ferromagnetic shape memory alloy is composed of a nano-eutectic layer structure of Heusler base phase and γ phase. Its martensitic transformation temperature is 303K, and it has the characteristics of high toughness, high strength and simple production process.

Description

technical field [0001] The invention relates to the technical field of metal alloys, in particular to a ferromagnetic shape memory alloy with a nano-eutectic layer structure. Background technique [0002] Ni-Mn-based Heusler (Hassler) magnetic shape memory alloy is a new type of functional material integrating "sensing" and "driving". It not only has a large magnetically induced strain, but also has an ultra-high response frequency. Therefore, it has become a driving material with great application prospects. Ni-Mn-Ga-based alloys are the earliest discovered magnetic shape memory alloys. The magnetically induced strain comes from the macroscopic strain caused by the rearrangement of martensite twin variants under the action of an external magnetic field, and the output stress is small. The strain mechanism of the Ni-Mn-X (X=In, Sb, Sn) alloy is a magnetically induced reverse martensitic transformation driven by the difference in Zeeman energy of the two phases, which can be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C30/04C22C1/02H01F1/147H01F41/02
CPCC22C1/023C22C19/005C22C19/03C22C30/04H01F1/14716H01F41/0233
Inventor 吴志刚梁志文张亚九向婉婉
Owner GUANGZHOU UNIVERSITY
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