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PERC battery assembly with high PID resistance and preparation method thereof

A battery component and resistance technology, which is applied in the field of solar cells, can solve the problems of poor performance of the battery against PID failure, and achieve the effects of improving the folding rate, optimizing the number of deposition cycles, and optimizing the refractive index

Pending Publication Date: 2019-11-22
TONGWEI SOLAR ENERGY MEISHAN CO LTD +1
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is: in order to solve the technical problem that the existing PERC battery only relies on the change of the composition and thickness of the passivation anti-reflection film to solve the PID effect, and the performance of the battery against PID failure is relatively poor, the present invention provides a PID resistance high PERC cell assembly and preparation method thereof

Method used

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  • PERC battery assembly with high PID resistance and preparation method thereof
  • PERC battery assembly with high PID resistance and preparation method thereof
  • PERC battery assembly with high PID resistance and preparation method thereof

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Embodiment 1

[0032] like figure 1 As shown, the present embodiment provides a PERC battery assembly with high PID resistance and a preparation method thereof, comprising a substrate layer 1, the top surface of the substrate layer 1 is sequentially provided with a diffusion layer 2, a SiOx positive passivation layer 3 and a substrate layer 1 from bottom to top. SixNy positive antireflection passivation protective film layer 4, the bottom surface of substrate layer 1 is provided with SiOx back passivation layer 6, AlOx back passivation film layer 7 and SixNy back antireflection passivation protective film layer 8 sequentially from top to bottom, SixNy positive The thickness of the anti-reflection passivation protective film layer 4 is 75-95nm, and its refractive index is 2.08-2.13. The number of film layers is at least 2 layers, and the refractive index of the nearest layer from the substrate layer 1 is ≥ 2.1, the thickness of the AlOx back passivation film layer 7 is 2-28nm, and the refract...

Embodiment 2

[0047] like Figures 1 to 2 As shown, this embodiment provides a method for preparing a PERC cell assembly with high PID resistance, comprising the following steps:

[0048] S1: According to the tubular PECVD process, the diffusion layer 2 and the SiOx positive passivation layer 3 are sequentially prepared on the top surface of the substrate layer 1, and the SiOx back passivation layer 6 is prepared on the bottom surface of the substrate layer 1;

[0049] S2: Then, the AlOx rear passivation layer 7 is deposited on the bottom surface of the SiOx rear passivation layer 6 by ALD process, and the number of deposition circles is 24-36 circles;

[0050] S3: Then coating the top surface of the SiOx positive passivation layer 3 to form a SixNy positive anti-reflection passivation protective film layer 4, and annealing, the annealing time is 17-44min, and the annealing temperature is 380-480°C;

[0051] S4: Then coating the bottom surface of the AlOx back passivation layer 7 to form a...

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Abstract

The invention discloses a PERC battery assembly with high PID resistance and a preparation method thereof, relating to the technical field of solar cells. The PERC battery assembly includes a substrate layer, a diffusion layer, a SiOx positive passivation layer and a SixNy positive antireflection passivation protective film layer are sequentially arranged on the top surface of the substrate layerfrom bottom to top; a SiOx back passivation layer, an AlOx back passivation film layer and a SixNy back antireflection passivation protection film layer are sequentially arranged on the bottom surfaceof the substrate layer from top to bottom. The PERC battery assembly is characterized in that the thickness of the SixNy positive anti-reflection passivation protective film layer is 75 to 95 nm; therefractive index of the optical glass is 2.08 to 2.13; the thickness of the SixNy back anti-reflection passivation protection film layer is 90 to 160nm; the number of the SixNy back anti-reflection passivation protective film layers is at least two. The refractive index of the layer closest to the substrate layer is greater than or equal to 2.1; wherein the thickness of the AlOx back passivationfilm layer is 2-28 nm, and the refractive index of the AlOx back passivation film layer is 1.56-1.76. According to the invention, by optimizing the arrangement of the battery assembly and the thickness and refractive index of each layer of assembly, and optimizing the preparation process, the prepared battery has high PID resistance.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a PERC cell component with high PID resistance and a preparation method thereof. Background technique [0002] In recent years, more and more attention has been paid to the reliability of photovoltaic cells caused by the PID effect. The mechanism of the PID phenomenon is: water vapor enters the module through the edge-sealing silica gel or the back plate, or the module is exposed to high temperature and high humidity for a long time, the ester-acid bond in the module EVA is decomposed, and acetate anions that can move freely are produced. Acetate anion and soda ash in glass (Na 2 CO 3 ) reaction to precipitate Na+. Under the action of the internal electric field of the battery, Na+ drifts to the silicon substrate through the SiNx layer, destroying the PN junction, and finally causing a large degree of power attenuation at the module end. [0003] With the increase of PID p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/068H01L31/18
CPCH01L31/02167H01L31/02168H01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 王岚李忠涌张忠文谢毅
Owner TONGWEI SOLAR ENERGY MEISHAN CO LTD
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