Semiconductor device and manufacturing method thereof

Abstract

The present invention provides a semiconductor device and a manufacturing method thereof, the method comprising: providing a bonded device structure, the bonded device structure comprising a device substrate on the upper side and a supporting substrate on the lower side , the device substrate includes an active area and an invalid area surrounding the active area, thinning the active area and the invalid area of ​​the device substrate, and performing first planarization on the active area and the invalid area of ​​the device substrate ; Trim the part of the invalid area of ​​the device substrate to form a trimmed invalid area, and carry out second planarization to the active area of ​​the device substrate and the trimmed invalid area, due to the thickness of the device substrate Thinning is carried out through two planarization processes, and the trimming process is located between the two planarization processes, so that the influence of the planarization process on the device substrate is reduced, and the thickness uniformity of the device substrate is improved, thereby improving performance of semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the increasing demand for miniaturization, light weight and multi-functionalization of electronic components, integrated circuits have higher and higher requirements for ultra-thin chips. Micro-electro-mechanical systems (MEMS), image sensors (CIS: CMOS Image Sensor), stacked die, and multi-chip packages (Multi chip package) all use ultra-thin chips with a thickness of less than 50 μm. [0003] In the prior art, ultra-thin chips are mostly obtained by performing a bonding and thinning process on semiconductor wafers. For non-EPI (epitaxial layer) substrates, its thinning process generally includes the following steps: step S1, bonding the device substrate to the supporting substrate; step S2, thinning the surface of the device substrate; step S3 , trimming the edge ...

AI Technical Summary

Problems solved by technology

However, since most of the edge of the device substrate is removed after the trimming process is performed on the edge of the device substrate, the edge of the device substrate is relatively close to the active area, and the subsequent planarization process will affect the edge of the device substrate. Scratches form inclined surfaces, which affect the thickness uniformity of the device substrate, and also make it difficult to control the thickness uniformity of the active area, which ultimately affects the performance of the semiconductor device

Images