Bubble defect processing method for wafer bonding process
A wafer bonding and defect processing technology, applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc. Abnormal, avoid bubble defect rupture, avoid the effect of product yield decline
Active Publication Date: 2019-12-13
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
Bubble defects will not only lead to 100% yield loss in the area where the bubbles are located, but at the same time, the bubbles are also prone to rupture in subsequent processes and cause other defects, such as residues generated by bubble rupture when the wafer is ground during the thinning process It will cause scratches on the surface of the wafer, or when the bonded and thinned wafer continues to form a film structure, the residue generated by the bubble burst under the high temperature in the furnace tube will contaminate the machine, resulting in batches in the machine. of wafer surfaces are contaminated, resulting in batch anomalies for bonded wafers
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[0028] In order to make the purpose, advantages and characteristics of the present invention clearer, the following in conjunction with the attached Figure 1~2d The bubble defect processing method of the wafer bonding process and the manufacturing method of the semiconductor device proposed by the present invention are further described in detail. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0029] An embodiment of the present invention provides a method for processing bubble defects in a wafer bonding process, see figure 1 , figure 1 It is a flowchart of a method for processing bubble defects in a wafer bonding process according to an embodiment of the present invention, and the method for processing bubble defects in the wafer bonding process includes:
[0030] Step S1, providing a wafer bonding stru...
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Abstract
The invention provides a bubble defect processing method for a wafer bonding process and a manufacturing method of a semiconductor device. The bubble defect processing method for a wafer bonding process comprises the following steps: providing a wafer bonding structure; detecting whether the bubble defect of the bonding interface of the wafer bonding structure exceeds a specification or not; if the bubble defect of the bonding interface of the wafer bonding structure exceeds the specification, breaking the bubble defect, and removing disintegrating slag generated on the surface of the wafer bonding structure when the bubble defect is broken; and if the bubble defect of the bonding interface of the wafer bonding structure does not exceed the specification, performing a next procedure of thewafer bonding process. By adopting the technical scheme, a bubble defect exceeding the specification can be removed in time, so that the wafer bonding structure is prevented from being abnormal, andthe product yield is prevented from being reduced.
Description
Technical field [0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a bubble defect treatment method in a wafer bonding process and a manufacturing method of a semiconductor device. Background technique [0002] Wafer bonding has become a key technology for the integrated development and practicalization of semiconductor manufacturing technology. Wafer bonding refers to attaching two flat wafers face to face, and applying certain external conditions such as pressure, temperature, voltage, etc. to generate atomic or intermolecular bonding force at the interface between the original two wafers. , such as covalent bonds, metal bonds, molecular bonds, etc., so that the bonding energy between the two surfaces can reach a certain strength and the two wafers become one. [0003] However, during the wafer bonding process, bubble defects of varying sizes will be formed at the bonding interface due to residual particles on...
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Patent Timeline
Login to View More IPC IPC(8): H01L21/66H01L21/60
CPCH01L22/12H01L24/03
Inventor 刘浩熊星星王森
Owner WUHAN XINXIN SEMICON MFG CO LTD