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Method for improving photoelectric conversion rate of two-dimensional perovskite solar cell

A technology for solar cells and photoelectric conversion rates, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as lower performance than three-dimensional perovskites, achieve the effects of reducing internal defects, reducing grain boundary area, and improving mobility

Inactive Publication Date: 2019-12-13
马鞍山吉祥光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the existing two-dimensional perovskite materials have better stability than three-dimensional perovskite batteries, but the performance is lower than that of three-dimensional perovskite, and provide a method to improve the solar energy of two-dimensional perovskite. The method of photoelectric conversion rate of battery

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Embodiment 1

[0021] A method for improving the photoelectric conversion rate of a two-dimensional perovskite solar cell, wherein the solar cell is as follows from bottom to top: FTO conductive glass layer, TiO2 dense layer, TiO2 mesoporous layer, perovskite layer, hole absorbing layer, Electrode layer; Wherein, described compact layer thickness is 40nm, TiO Mesoporous layer thickness is 400nm, hole transport layer thickness is 120nm, electrode layer thickness is 120nm; Perovskite layer is perovskite thin film, and thickness is 280nm;

[0022] Wherein, the square resistance of the FTO conductive glass is 14Ω / cm², and the transmittance is greater than 80%; the TiO2 dense layer is leached 3 times with diisopropoxydiacetylacetonate titanium ethanol solution with a concentration of 0.5mol / L , the leaching rate is 0.3mm / s, after each leaching is completed, let it stand for 10 minutes, and then dry it at 100°C for 20 minutes to obtain that; the TiO2 mesoporous layer is obtained by using titanium d...

Embodiment 2

[0031] A method for improving the photoelectric conversion rate of a two-dimensional perovskite solar cell, wherein the solar cell is as follows from bottom to top: FTO conductive glass layer, TiO2 dense layer, TiO2 mesoporous layer, perovskite layer, hole absorbing layer, Electrode layer; wherein, the thickness of the dense layer is 50nm, the TiO2 mesoporous layer thickness is 300nm, the hole transport layer thickness is 60nm, and the electrode layer thickness is 180nm; the perovskite layer is a perovskite film with a thickness of 220nm;

[0032] Wherein, the square resistance of the FTO conductive glass is 14Ω / cm², and the transmittance is greater than 80%; the TiO2 dense layer is leached 3 times with diisopropoxy diacetylacetonate titanium ethanol solution with a concentration of 0.6mol / L , the leaching rate is 0.3mm / s, after each leaching is completed, let it stand for 10 minutes, and then dry it at 100°C for 20 minutes to obtain that; the TiO2 mesoporous layer is obtained ...

Embodiment 3

[0041] A method for improving the photoelectric conversion rate of a two-dimensional perovskite solar cell, wherein the solar cell is as follows from bottom to top: FTO conductive glass layer, TiO2 dense layer, TiO2 mesoporous layer, perovskite layer, hole absorbing layer, Electrode layer; wherein, the thickness of the dense layer is 30nm, the TiO2 mesoporous layer thickness is 500nm, the hole transport layer thickness is 180nm, and the electrode layer thickness is 60nm; the perovskite layer is a perovskite film with a thickness of 320nm;

[0042] Wherein, the square resistance of the FTO conductive glass is 14Ω / cm², and the transmittance is greater than 80%; the TiO2 dense layer is leached 3 times with diisopropoxydiacetylacetonate titanium ethanol solution with a concentration of 0.4mol / L , the leaching rate is 0.3mm / s, after each leaching is completed, let it stand for 10 minutes, and then dry it at 100°C for 20 minutes to obtain that; the TiO2 mesoporous layer is obtained b...

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Abstract

The invention belongs to the technical field of photovoltaic materials, and particularly relates to a method for improving the photoelectric conversion rate of a two-dimensional perovskite solar cell.The solar cell comprises, from bottom to top, an FTO conductive glass layer, a Ti02 dense layer, a Ti02 mesoporous layer, a perovskite layer, a hole absorption layer and an electrode layer. The solarcell is characterized in that the perovskite layer is a perovskite thin film with a thickness of 220 to 320nm. The preparation method comprises the steps of mixed solution preparation, perovskite precursor solution preparation, and perovskite thin film preparation and treatment. Compared with the prior art, the method provided by the invention has the advantages that the prepared perovskite thinfilm has good stability, and can be used to prepare the perovskite solar cell to improve the photoelectric conversion rate of the perovskite solar cell; and the cell has the advantages of good performance, long service life and wide application range.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic materials, and in particular relates to a method for improving the photoelectric conversion rate of a two-dimensional perovskite solar cell. Background technique [0002] The perovskite structure material refers to any material that has the same crystal structure as calcium titanate CaTiO3. Experiments have found that when the metal halide material forms a perovskite structure, it is very effective as a collection layer in photovoltaic solar cells. Can successfully convert solar energy into electrical energy. Based on this discovery, in 2009, perovskite structure materials were officially used in thin-film solar cells. In the next few years, perovskite structure materials have made great progress in the photovoltaic field. With the rapid development, the photoelectric conversion rate continues to increase, especially the metal halide perovskite materials, whose raw materials are generally che...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/10H10K30/00Y02E10/549
Inventor 唐子成
Owner 马鞍山吉祥光电科技有限公司
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