Doped sulfide composite film, preparing method of doped sulfide composite film and workpiece comprising doped sulfide composite film

A composite film and sulfide technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of low hardness of sulfide film, complicated preparation method, high friction coefficient, and achieve enhanced mechanical properties , The effect of inhibiting rapid growth and high crystalline strength

Active Publication Date: 2019-12-17
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The first object of the present invention is to provide a doped sulfide composite film to solve the problems of low hardness, high friction coefficient and high wear rate of sulfide films in the prior art
[0006] The second object of the present invention is to provide a method for preparing a doped sulfide composite film, so as to solve the problems of complicated preparation methods and high costs in the prior art

Method used

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  • Doped sulfide composite film, preparing method of doped sulfide composite film and workpiece comprising doped sulfide composite film
  • Doped sulfide composite film, preparing method of doped sulfide composite film and workpiece comprising doped sulfide composite film

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Embodiment 1

[0030] The doped sulfide composite thin film of this embodiment is composed of doping elements and sulfides, the doping elements are Ce and Al, and the sulfides are WS 2 , the mass percentage of doping element Ce is 13.2%, the mass percentage of doping element Al is 2.08%, and the balance is sulfide.

Embodiment 2-14

[0032] The doped sulfide composite thin film of embodiment 2-14 is composed of doping elements and sulfides, the doping elements are Ce and Al, and the sulfides are WS 2 ; The contents of each component are listed in Table 1.

[0033] The doped sulfide (WS) of table 1 embodiment 2-13 2 ) composition of the composite film

[0034]

Embodiment 15

[0036] The doped sulfide-based composite thin film of this embodiment is composed of doping elements and sulfides, the doping elements are Ce and Al, and the sulfides are MoS 2 , the mass percentage of doping element Ce is 12.98%, the mass percentage of doping element Al is 2.12%, and the balance is sulfide.

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Abstract

The invention relates to a doped sulfide composite film, a preparing method of the doped sulfide composite film and a workpiece comprising the doped sulfide composite film. The doped sulfide compositefilm is composed of doped elements and sulfide, wherein the doped elements are Ce and Al, and the sulfide is WS2 or MoS2; and the doped sulfide composite film includes, by mass, 6.11%-14.27% of Ce, 1.13%-10.26% of Al and the balance sulfide. The mechanical performance of the doped sulfide composite film is improved, and therefore good wear-resisting performance can be shown; and the crystal strength of the Ce and Al co-doped sulfide base composite film is high, and the elasticity and elasticity modulus are improved by 300% or higher.

Description

technical field [0001] The present application relates to the technical field of surface engineering, in particular to a doped sulfide composite film, a preparation method thereof, and a workpiece containing a doped sulfide composite film. Background technique [0002] Sulfide thin films have received extensive research attention due to their excellent lubricating properties, such as WS 2 thin film, MoS 2 film. However, there are still many deficiencies in sulfide films, such as WS 2 The film has high porosity, low hardness, and low film-substrate binding force, which affect the WS 2 Application of thin films in occasions requiring high bearing capacity; MoS 2 The film is easily oxidized during friction in the atmosphere and oxygen-rich environment, resulting in MoS 2 The frictional properties of the thin film drop sharply, and then lose the lubricating effect, which seriously affects the MoS 2 Engineering application of thin films in atmospheric environment; at the sa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/02
CPCC23C14/021C23C14/025C23C14/0623C23C14/352
Inventor 薛玉君蔡海潮李航司东宏贺江涛刘春阳杨芳马喜强
Owner HENAN UNIV OF SCI & TECH
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