A kind of characterization method of metal silicide

Abstract

The present invention relates to a characterization method and a characterization device of a metal silicide. The characterization method includes: providing a semiconductor structure, the semiconductor structure including a silicon substrate, a metal gate layer, and a metal gate layer formed between the metal gate layer and the silicon substrate. The metal silicide between; generate the electron energy loss spectrum of the semiconductor structure; according to the electron energy loss spectrum, generate the intensity of the plasma peak of the silicon substrate under different energy loss positions and energy widths and the plasma of the metal silicide The first ratio curve of the intensity of the bulk peak, the second ratio curve of the intensity of the plasma peak of the metal gate layer and the intensity of the plasma peak of the metal silicide; according to the first ratio curve and the second ratio curve , select the corresponding energy loss position and energy width as detection parameters; use the detection parameters to perform energy-filtered transmission electron microscope detection on the semiconductor structure to characterize the surface morphology and distribution of the metal silicide.

Description

technical field [0001] The invention mainly relates to the field of semiconductor detection, in particular to a method for characterizing metal silicides. Background technique [0002] In large-scale integrated circuits, the contact resistance between metal and semiconductor will affect the noise frequency characteristics, output power, thermal stability and reliability of semiconductor devices. Therefore, there is a need to prepare electrode contacts with low resistivity. [0003] Metal silicides are key materials for reducing contact resistance between metals and semiconductors. Among metal silicides, titanium silicide (TiSi 2 ) is widely used in the source, drain, and gate of MOS (Metal Oxide Semiconductor) structures due to its excellent high temperature stability, low resistivity characteristics, and self-aligned contact processing. TiSi 2 The composition and morphology of the metal-silicon contact resistance have a great influence on the resistance, so it is necess...

AI Technical Summary

Problems solved by technology

However, ordinary TEM or STEM (Scanning Transmission Electron Microscope, Scanning Transmission Electron Microscope) imaging can only give interface structure and morphology information, not including interface composition information; EDS and EELS can give interface composition distribution information, but The operation process and result analysis are more complex

Combining TEM, STEM, EDS and even EELS to analyze the structure and composition of the metal-silicon interface is time-consuming and complicated

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