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Focal plane detector suitable for curved surface imaging and preparation method of detector

A technology of focal plane detector and focal plane array, which is applied in the direction of electric radiation detector, radiation pyrometry, instrument, etc., and achieves the effect of simple preparation process, high preparation efficiency and convenient peeling

Pending Publication Date: 2019-12-31
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the aberration needs to be compensated and corrected through the focal plane of the complex optical system during traditional imaging, and the aberration can be directly compensated through the structure of the focal plane detector suitable for curved surface imaging of the present invention. This greatly simplifies the design of the optical system and improves the high-resolution performance in a large field of view

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  • Focal plane detector suitable for curved surface imaging and preparation method of detector

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Embodiment 1

[0019] Taking the pixel pitch as 15 μm, the silicon-based chip array as 640×512, the F-number as 0.9, and the focal length as 20mm as examples, the structure of the present invention and the specific implementation of the preparation method will be further described in conjunction with the accompanying drawings:

[0020] The silicon-based chip is prepared on the silicon oxide layer or other sacrificial layer. After the preparation is consistent with the normal process, the silicon-based chip on the sacrificial layer can be obtained. After the sacrificial layer is completely removed, the upper silicon-based chip can be peeled off to form a A flexible silicon-based thin layer, the thin layer thickness is 0.01mm, the silicon-based thin layer is bonded to the supporting substrate with DW-3 low-temperature epoxy glue. The silicon nitride material is then placed on a PDMS flexible mold with a certain curvature to shape it. The PDMS flexible mold in this example is a hemispherical mol...

Embodiment 2

[0022] Taking the pixel pitch as 15 μm, the silicon-based chip array as 640×512, the F-number as 2, and the focal length as 60mm as examples, the structure of the present invention and the specific implementation of the preparation method will be further described in conjunction with the accompanying drawings:

[0023] The silicon-based chip is prepared on the silicon oxide layer or other sacrificial layer. After the preparation is consistent with the normal process, the silicon-based chip on the sacrificial layer can be obtained. After the sacrificial layer is completely removed, the upper silicon-based chip can be peeled off to form a A flexible silicon-based thin layer, the thin layer thickness is 0.05mm, the silicon-based thin layer is bonded to the supporting substrate with DW-3 low-temperature epoxy glue, and the supporting substrate is 0.2mm thick in this example. The silicon nitride material is then placed on a PDMS flexible mold with a certain curvature, and shaped. Th...

Embodiment 3

[0025] Taking the pixel pitch as 15 μm, the silicon-based chip array as 640×512, the F number as 5, and the focal length as 150 mm as examples, the structure of the present invention and the specific implementation of the preparation method will be further described in conjunction with the accompanying drawings:

[0026] The silicon-based chip is prepared on the silicon oxide layer or other sacrificial layer. After the preparation is consistent with the normal process, the silicon-based chip on the sacrificial layer can be obtained. After the sacrificial layer is completely removed, the upper silicon-based chip can be peeled off to form a A flexible silicon-based thin layer, the thin layer thickness is 0.1mm, the silicon-based thin layer is bonded to the supporting substrate with DW-3 low-temperature epoxy glue, and the supporting substrate is 0.5mm thick in this example The silicon nitride material is then placed on a PDMS flexible mold with a certain curvature, and shaped. Th...

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Abstract

The invention provides a focal plane detector suitable for curved surface imaging and a preparation method of the detector. The focal plane detector suitable for curved surface imaging comprises a supporting substrate and a shaped focal plane array, wherein the shaped focal plane array is located on the surface of the supporting substrate; and the curved surface shapes of the shaped focal plane array and the supporting substrate are kept consistent. With the above structure adopted, light can be always focused on the focal plane detector; a maximum imaging effect can be ensured without complexoptical correction calculation required. The structure is suitable for large-view-field, large-area-array and high-resolution imaging. According to the preparation method, a PDMS flexible mold is used for shaping a silicon-based focal plane; an ultraviolet curing material and ultraviolet irradiation are used for shaping; a shaping process is simple; complex and expensive instruments and equipmentare not needed in a shaping process; and the preparation efficiency of the preparation method is high.

Description

technical field [0001] The invention belongs to the related technical field of infrared detector chip preparation, and specifically refers to a detector suitable for curved surface imaging and a preparation method thereof. Background technique [0002] Infrared imaging detection is the core part of the photoelectric system. It can realize day and night observation, passive imaging, and the ability to resist sunlight interference, atmosphere and battlefield smoke and other environmental scattering is significantly better than the visible light system. Large-field-of-view and high-resolution detection is a key issue in the development of infrared imaging technology. Modern large-field-of-view and high-resolution infrared imaging detection requires the use of complex optical systems to reduce aberrations and improve optical resolution, which brings about problems such as large volume and weight of high-resolution systems. The application of active attack weapons brings applica...

Claims

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Application Information

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IPC IPC(8): G01J5/20H01L27/144
CPCG01J5/20H01L27/1446G01J2005/0077G01J2005/204
Inventor 叶振华张伟婷陈星刘丰硕孙常鸿
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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