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A kind of epitaxy method to improve LED brightness

A technology of epitaxy and brightness, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that the brightness cannot be improved, and achieve the effect of improving the brightness and brightness of LEDs

Active Publication Date: 2021-02-05
陕西飞米企业管理合伙企业(有限合伙)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the traditional LED epitaxial structure, the process conditions for the growth of each epitaxial layer require precise calculation and strict control to achieve, and the brightness can no longer be improved after reaching the peak

Method used

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  • A kind of epitaxy method to improve LED brightness
  • A kind of epitaxy method to improve LED brightness
  • A kind of epitaxy method to improve LED brightness

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Embodiment Construction

[0016] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0017] The present invention is an epitaxial method for improving the brightness of LED. The traditional LED epitaxial structure is as follows: figure 1 As shown, in the traditional LED multiple quantum well growth process, after the last layer of quantum barrier is completed, an epitaxial roughening layer different from the quantum barrier is added, as shown in figure 2 As shown, the atmosphere environment in the reaction chamber still uses the quantum barrier growth conditions, that is, the atmosphere environment in the reaction chamber is the V-group gas source carrier gas and the gas introduced into the reaction chamber. The newly added LED epitaxial structure is the contact layer, P-type doped Layer, P-type retardation layer, epitaxial roughening layer, multiple quantum wells, stress release layer, N-type retardation layer, N-type doped...

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Abstract

The invention discloses an epitaxy method for improving the brightness of an LED. In the multi-quantum well growth process of a traditional LED, after the last layer of quantum barrier is finished, anepitaxial coarsening layer different from the quantum barrier is newly added; the atmosphere environment in a reaction chamber still follows the quantum barrier growth condition, namely, the atmosphere environment in the reaction chamber is V-group gas source carrier gas and gas introduced into the reaction chamber, and the newly-added LED epitaxial structure sequentially comprises a contact layer, a P-type doped layer, a P-type blocking layer, an epitaxial coarsening layer, multiple quantum wells, a stress release layer, an N-type blocking layer, an N-type doped layer, a non-doped layer, a buffer layer and a substrate. Thus, the brightness of the LED and the device efficiency are improved.

Description

technical field [0001] The invention belongs to the technical field of LED material preparation and structure design, and in particular relates to an epitaxy method for improving LED brightness. Background technique [0002] In the traditional LED epitaxial growth process, the substrate is first treated with high temperature during the conventional growth process. After the water vapor and impurities are treated, the buffer layer is grown at a low temperature to deal with the lattice mismatch between different materials, and then the buffer layer is subjected to high temperature treatment. Annealing treatment for recrystallization, and then a non-doped buffer layer at a suitable temperature, and then sequentially grow N-type doped layer, N-type hole block layer, stress release layer, quantum well layer, P-type electron block layer, P-type layer and contact layer. In the traditional LED epitaxial structure, the process conditions for the growth of each epitaxial layer requir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22H01L33/32
CPCH01L33/0075H01L33/22H01L33/325
Inventor 彭鹏
Owner 陕西飞米企业管理合伙企业(有限合伙)