A kind of preparation method of high-brightness violet LED chip and LED chip
A LED chip, high-brightness technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing light extraction efficiency, small light extraction angle, reducing the brightness of purple LED chips, etc., to improve light extraction efficiency and solve leakage Problems, the effect of increasing light efficiency
Active Publication Date: 2021-11-16
FOSHAN NATIONSTAR SEMICON
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Problems solved by technology
[0003] The existing violet LED chips are mostly made of GaN-based semiconductors, but due to the large refractive index of GaN materials, the light extraction angle is small, which greatly reduces the light extraction efficiency and reduces the brightness of violet LED chips; especially the wavelength of violet light is relatively short , leading to more obvious total reflection effect and lower light extraction efficiency
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[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. It is only stated here that the words for directions such as up, down, left, right, front, back, inside, and outside that appear or will appear in the text of the present invention are only based on the accompanying drawings of the present invention, and are not specific to the present invention. limited.
[0037] see figure 1 , the invention provides a kind of preparation method of high brightness violet LED chip, it comprises the following steps:
[0038] S1: providing a substrate, and forming an epitaxial layer on the substrate;
[0039] Wherein, the substrate can be sapphire, but not limited thereto.
[0040] The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer; both the first semiconductor layer and the s...
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Abstract
The invention discloses a method for preparing a high-brightness violet LED chip, which comprises: providing a substrate to form an epitaxial layer; performing MESA etching on the epitaxial layer to form a hole penetrating to the first semiconductor layer; Dry etching and wet etching to form a secondary rough surface; form the first electrode in the hole, and form the second electrode in the second semiconductor layer; split the substrate to obtain a finished high-brightness violet LED chip. Correspondingly, the present invention also provides a high-brightness purple LED chip; the present invention forms a secondary rough surface through two etching processes, which can effectively improve the light extraction efficiency, increase the light output efficiency, and improve the brightness of the purple LED chip. brightness.
Description
technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a method for preparing a high-brightness violet LED chip and the LED chip. Background technique [0002] Violet LED is a new type of LED chip, and its light-emitting wavelength is 260-400nm, which is shorter than that of common blue-green LEDs. Purple LEDs are closer to sunlight, and will not affect human sleep quality and myopia problems like blue light, so they are considered to have broad application prospects. [0003] The existing violet LED chips are mostly made of GaN-based semiconductors, but due to the large refractive index of GaN materials, the light extraction angle is small, which greatly reduces the light extraction efficiency and reduces the brightness of violet LED chips; especially the wavelength of violet light is relatively short , leading to more obvious total reflection effect and lower light extraction efficiency. [0004] In the existing blu...
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IPC IPC(8): H01L33/00H01L33/32H01L33/22
CPCH01L33/0075H01L33/22H01L33/32
Inventor 仇美懿庄家铭徐亮
Owner FOSHAN NATIONSTAR SEMICON