Bidirectional semiconductor discharge tube and preparation method thereof
A discharge tube and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as signal distortion
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[0053] In one embodiment, this embodiment also provides a method for preparing a bidirectional semiconductor discharge tube. For a schematic cross-sectional structure diagram of a bidirectional semiconductor discharge tube, see figure 1 As shown, the bidirectional semiconductor discharge tube includes a substrate layer 10 having a first conductivity type and a first device layer 11 and a second device layer 12 respectively arranged on both sides of the substrate layer 10, the first device layer 11 The structure of the second device layer 12 is arranged symmetrically, and the preparation method of the first device layer 11 and the second device layer 12 is the same, and the preparation method includes:
[0054] Step a: Form a diffusion layer 21 with a second conductivity type on one side of the substrate layer 10 with the first conductivity type, see image 3 shown.
[0055] In this embodiment, the diffusion layer 21 is formed on the surface of the substrate layer 10 by doping...
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