A level shifting circuit and level shifting method

Abstract

The invention discloses a level conversion circuit and a level conversion method, comprising: a current mirror, a first and a second NMOS transistor; the gates of the first and second NMOS transistors are connected to the same bias voltage; the first NMOS The drain of the transistor is connected to one side of the current mirror, and the drain of the second NMOS transistor is connected to the other side of the current mirror; the source of the first NMOS transistor is connected to the input voltage, and the source of the second NMOS transistor is connected to the threshold voltage; the first 1. The second NMOS transistor converts the input voltage and the threshold voltage into corresponding currents, which are input to both sides of the current mirror; the current mirror compares the two currents input from the first and second NMOS transistors, and converts them into corresponding voltages Output from the other side of the current mirror; the first input terminal of the hysteresis inverter is connected to the voltage output by the current mirror, and the second input terminal is connected to the power supply voltage; when the input voltage is greater than the threshold voltage, the voltage output by the current mirror is zero, The output voltage of the hysteretic inverter is the supply voltage. The invention reduces the requirement on the input signal and realizes level conversion.

Description

technical field [0001] The present invention relates to the technical field of analog integrated circuits, and more specifically, to a level conversion circuit and a level conversion method. Background technique [0002] As integrated circuits become more integrated, more and more circuit modules with different functions will be integrated into one chip. However, because different circuit modules in the chip have different power requirements, such as low power consumption circuits generally require low power supply voltages, high-speed communication chips require higher power supply voltages to increase their voltage conversion rates, and different chips also require There will be different voltage domains. Therefore, a level conversion circuit is required to enable signals to be transmitted between different voltage domains. It should be noted that when the signal is transferred from the low-voltage domain to the high-voltage domain, if the level conversion circuit cannot...

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Problems solved by technology

[0004] In view of the defects of the prior art, the purpose of the present invention is to solve the technical problem that the low-level signal whose voltage domain is lower than the threshold voltage of the NMOS transistor cannot be converted into a high-level signal through the existing level conversion circuit

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