Miniature ultra-low capacitance solid discharge tube and manufacturing method thereof

Abstract

The invention discloses a miniature ultra-low capacitance solid discharge tube and a manufacturing method thereof. A boron-based region P is arranged on the solid discharge tube, a phosphorus diffusion buried layer N- which is partially overlapped is arranged on one side of the boron-based region P, a first phosphorus diffusion region N+ is arranged in the boron-based region P, and a plurality ofshort-circuit holes are arranged in the first phosphorus diffusion region N + to form a cellular cathode. A boron region P and a second phosphorus diffusion region N+ are arranged below the solid discharge tube, and the boron region P and the second phosphorus diffusion region N+ are arranged at intervals to form a one-way chip anode structure. In the invention, on the basis of an original low-capacitance structure design, a N- buried layer is added to the cathode so that heat sink of each cellular cathode is increased, and a flow capacity is improved on the basis of a same chip area. A boronregion and a second phosphorus diffusion region N+ are arranged in an symmetrical mode, reverse voltage drop of a single discharge tube is eliminated, and based on the design, an area of an original chip can be reduced so that the area of a PN junction is reduced, and a junction capacitance is greatly decreased.

Description

technical field [0001] The invention relates to the design and manufacture of semiconductor chips, in particular to a miniature ultra-low capacitance solid discharge tube. Background technique [0002] At present, the withstand voltage control of conventional low-voltage solid discharge tubes (below 64V) can achieve consistency within 5V, which can fully meet the current client line requirements. However, as the data transmission rate of customer application lines is getting higher and higher , the design power consumption of circuit boards is getting lower and lower, so low-voltage, small-volume, and highly integrated solid protection devices are more and more widely used, but the junction capacitance of low-voltage solid protection devices with the same lightning strike level is generally higher by 25~ 30pF, because the high junction capacitance will affect the quality of data transmission, and the junction capacitance will cause packet loss in the transmission of digital ...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the current low-capacitance structure cannot realize the parasitic capacitance below 15pF, and the current chip area cannot meet the tiny SOT-23 inte

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