Structure and a manufacturing method of a mosfet with an element of iva group ion implantation

Abstract

A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.

Description

technical field [0001] The present invention relates to the structure and manufacturing method of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with Group IVA ion implantation, especially to a gate oxide layer before oxidation Improved structure and fabrication of 4H-SiC oxides using Group IVA ion implantation. Background technique [0002] In the prior art, the field effect electron mobility of the silicon carbide metal oxide semiconductor field effect transistor is too low (5 ~ 10cm 2 / V s) has always been the biggest shortcoming of silicon carbide devices. In recent years, thermal annealing of nitrogen monoxide after oxidation has been developed to effectively increase the electron mobility to about 30cm 2 / V·s. [0003] Hui-feng Li of Griffith University in Australia proposed in 1997 that after the oxidation process of 6H-SiC metal oxide semiconductor capacitor (MOSC), nitrogen monoxide (NO) and nitrous oxide (N 2 O) rapid heating process (Rapidthermal ...

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Problems solved by technology

[0002] In the prior art, the field effect electron mobility of the silicon carbide metal oxide semiconductor field effect transistor is too low (5 ~ 10cm 2 / V s) has always been the biggest shortcoming of silicon carbide devices. In recent years, thermal annealing of nitrogen monoxide after oxidation has been developed to effectively increase the electron mobility to about 30cm 2 / V·s

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