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A Double Balanced FET Mixer

A mixer and double-balanced technology, which is applied in the field of microwave and millimeter wave circuits, can solve the problems of high driving power requirements, increased system power consumption and design difficulties, and achieve excellent mixing loss, reduce local oscillator power requirements, and circuit Optimized effect

Active Publication Date: 2022-01-25
北京信芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the mixing units in current IQ mixers are realized by diodes, and the driving power of the local oscillator is required to be large.
For the IQ mixer with diode double-balanced mixing unit, the driving power of the local oscillator is generally required to be around 16dBm, which increases the system power consumption and design difficulty

Method used

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  • A Double Balanced FET Mixer
  • A Double Balanced FET Mixer
  • A Double Balanced FET Mixer

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0040] figure 2 It is a structural schematic diagram of the double-balanced FET mixer of the first embodiment of the present invention. Combine below figure 2 The present invention will be described.

[0041] The double-balanced FET mixer of this embodiment includes a FET ring mixing core 1, a radio frequency signal input terminal 2, a local oscillator signal input terminal 3, an intermediate frequency signal output terminal 4, a first balun 5, a second balun 6, a first balun Three baluns 7 and a bias voltage input terminal 8 . The FET ring mixer core 1 includes a first FET tube 11 , a second FET tube 12 , a third FET tube 13 and a fourth FET tube 14 . The grid of the first FET tube 11 is connected to the grid of the fourth FET tube 14, the drain of the first FET tube 11 is connected to the drain of the second FET tube 12, and the drain of the first FET tube 11 The source is connected to the source of the third FET tube 13 . The gate of the second FET tube 12 is connect...

no. 2 example

[0053] Figure 9 It is a schematic structural diagram of a double-balanced millimeter-wave FET mixer circuit according to the second embodiment of the present invention. Combine below Figure 9 The present invention will be described.

[0054] The double-balanced FET mixer of this embodiment includes a FET ring mixing core 1, a radio frequency signal input terminal 2, a local oscillator signal input terminal 3, an intermediate frequency signal output terminal 4, a first balun 5, a second balun 6, a first balun Three baluns 7 , a first bias voltage input terminal 8 and a second bias voltage input terminal 9 . The FET ring mixer core 1 includes a first FET tube 11 , a second FET tube 12 , a third FET tube 13 and a fourth FET tube 14 . The grid of the first FET tube 11 is connected to the grid of the fourth FET tube 14, the drain of the first FET tube 11 is connected to the drain of the second FET tube 12, and the drain of the first FET tube 11 The source is connected to the ...

no. 3 example

[0063] Figure 12 It is a schematic structural diagram of the quadrature mixer circuit of the third embodiment of the present invention, combined below Figure 12 to Figure 14 The present invention will be described.

[0064] according to Figure 12 The quadrature mixer in this embodiment shown includes a radio frequency input terminal 100, and a radio frequency signal is input to a radio frequency quadrature coupler 101 through the radio frequency input terminal 100, and the radio frequency quadrature coupler 101 outputs two signals to two identical structures. A double-balanced FET mixer 102, the double-balanced FET mixer 102 uses the double-balanced FET mixer described in one of the foregoing first to third embodiments. The local oscillator signal is input to the power divider 104 through the local oscillator signal input terminal 103, and the two-way local oscillator signal is output by the power divider 104 to the two identical double-balanced FET mixers 102, and the tw...

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Abstract

The invention discloses a double-balanced FET mixer. The double-balanced FET mixer includes a FET ring mixing core, a radio frequency plane balun, a local oscillator plane balun, and an intermediate frequency plane balun. The FET ring mixing core consists of The first FET tube, the second FET tube, the third FET tube, and the fourth FET tube are connected to each other. The radio frequency plane balun, the local oscillator plane balun and the intermediate frequency plane balun all adopt MARCHAND balun, and the DC bias The voltage VG is introduced to the gates of the four FET devices through the coupling line of the local oscillator plane balun, and the DC bias voltage VG of the gate voltage of the four FET devices is controlled by adjusting the DC bias voltage VG to control the first FET tube, the second Bias states of the FET tube, the third FET tube and the fourth FET tube.

Description

technical field [0001] The invention relates to the technical field of microwave and millimeter wave circuits, in particular to a double-balanced FET mixer, and to an IQ mixer using the double-balanced FET mixer. Background technique [0002] A mixer is an integral part of an RF microwave circuit system. Whether it is microwave communication, radar, remote control, remote sensing, or reconnaissance and electronic countermeasures, as well as microwave measurement systems, microwave signals must be processed by reducing the frequency to medium and low frequencies with a mixer. In practice, most AM, SSB and digital transmitters require a mixer to convert the signal frequency to a higher frequency, and then transmit it into the air; The frequency converter converts the frequency of the received signal to a lower intermediate frequency band, so as to facilitate effective amplification and filtering in the intermediate frequency band, and it is also easy to optimize the frequency...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03D7/14
CPCH03D7/1458
Inventor 姚鸿飞
Owner 北京信芯科技有限公司
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