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Ion implantation method and ion implanter

An ion implanter and ion implantation technology, which are applied in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve the problems that the implantation map and uniformity cannot be well controlled, and achieve the effect of precise control and improvement.

Active Publication Date: 2020-02-14
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two methods cannot control the injection map and uniformity well, so precise control of injection concentration and map becomes an important direction in super scan

Method used

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  • Ion implantation method and ion implanter
  • Ion implantation method and ion implanter
  • Ion implantation method and ion implanter

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Experimental program
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Embodiment Construction

[0036] like figure 1 shown is a flow chart of an ion implantation method according to an embodiment of the present invention; as Figure 2A As shown, it is a schematic diagram of observing the wafer 2 in the method according to the embodiment of the present invention; as Figure 2B As shown, it is a schematic diagram of observing the wafer 2 from the side in the method of the embodiment of the present invention; the ion implantation method of the embodiment of the present invention includes the steps:

[0037] Step 1. Place the wafer 2 on the rotatable base.

[0038] Step 2, using the point-shaped ion beam 101 to perform ion implantation on the wafer 2, including the following sub-steps:

[0039] Step 21, the point-shaped ion beam 101 is scanned by a scanning device to form a scanning ion beam 1, and the scanning ion beam 1 is formed by scanning the point-shaped ion beam 101 in the lateral direction through the scanning device, The lateral width of the scanning ion beam 1 i...

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PUM

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Abstract

The invention discloses an ion implantation method, which comprises the following steps: S1, placing a wafer on a rotatable base; and S2, carrying out ion implantation on the wafer by adopting a punctiform ion beam current. The step S2 comprises the following sub-steps: S21, scanning the punctiform ion beam current by a scanning device to form a scanning ion beam current; and S22, rotating the wafer, and carrying out ion implantation on the rotating wafer by adopting the scanning ion beam current so as to form a plurality of radially distributed annular ion implantation regions or fan-shaped ion implantation regions on the wafer. According to the invention, the ion implantation distribution can be accurately controlled, and the uniformity of ion implantation can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an ion implantation method; the invention also relates to an ion implanter. Background technique [0002] In the manufacture of semiconductor integrated circuits, in addition to the diffusion process for doping, the ion implantation process is also used for doping. The ion implantation process is realized by an ion implanter, which usually includes: an ion source, an extraction electrode, an ion analyzer, an acceleration tube and a process chamber. The ion analyzer is used to select the type of ions required, and the selected ions are accelerated by an accelerating tube to form an ion beam and are introduced into the process chamber to implement ion implantation on the wafer placed in the process chamber. The ion implanter has a Scan device to implant different positions of the wafer. [0003] The variation of the electrical properties of the device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/30H01J37/302H01J37/317H01L21/265
CPCH01J37/3171H01J37/3026H01J37/3005H01L21/265
Inventor 周真真刘厥扬胡展源
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD