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Graph transmission method

A graphics and graphics technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of inability to realize low-density graphics negative transfer

Inactive Publication Date: 2020-02-14
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a pattern transfer method to solve the problem that the negative transfer of low-density patterns cannot be realized in the extreme ultraviolet lithography process

Method used

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Embodiment Construction

[0034] The core idea provided by the present invention is to provide a pattern transfer method. The formation method of the semiconductor device includes the following steps: providing a semiconductor substrate, and sequentially forming a hard mask layer and a patterned extreme ultraviolet light on the semiconductor substrate. Photoresist layer; using the patterned extreme ultraviolet photoresist layer as a mask, etching the hard mask layer, and transferring the pattern in the patterned extreme ultraviolet photoresist layer to the hard mask layer In, to form a patterned hard mask layer, the patterned hard mask layer has an opening; form a filling layer in the opening; and remove the hard mask layer to expose the semiconductor substrate, the The filling layer in the opening is reserved on the semiconductor substrate, so as to realize the negative transfer of the low-density patterns in the patterned EUV photoresist layer.

[0035] Further, the hard mask layer includes a first h...

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Abstract

The invention provides a graph transmission method. The method comprises steps: providing a semiconductor substrate, and sequentially forming a hard mask layer and a graphical extreme ultraviolet photoresist layer on the semiconductor substrate; taking the graphical extreme ultraviolet photoresist layer as a mask, etching the hard mask layer, and transferring a graph in the graphical extreme ultraviolet photoresist layer into the hard mask layer to form a graphical hard mask layer, having an opening in the graphical hard mask layer; forming a filling layer in the opening; removing the hard mask layer to expose the semiconductor substrate, and reserving the filling layer in the opening on the semiconductor substrate to realize negative transfer of a low-density graph in the graphical extreme ultraviolet photoresist layer.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a graphics transfer method. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generation after generation of ICs, where each generation has smaller and more complex circuits than the previous generation. During IC development, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest component or line that can be created using a fabrication process) decreases. This scaling down process generally provides benefits by increasing production efficiency and reducing associated costs. Such scaling down also increases the complexity of IC handling and manufacturing. To achieve these advances, similar developments in IC processing and manufacturing are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/033
CPCH01L21/0332H01L21/0337H01L21/0338
Inventor 杨渝书伍强李艳丽
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT