Horizontal 8-cavity HWCVD-PVD integrated equipment for solar cell manufacturing

Abstract

The invention relates to a horizontal 8-cavity HWCVD-PVD integrated equipment for solar cell manufacturing. The horizontal 8-cavity HWCVD-PVD integrated equipment comprises a feeding cavity, a preheating cavity, an intrinsic amorphous silicon film deposition HWCVD cavity, a doped amorphous silicon film deposition HWCVD cavity, a first TCO film deposition PVD cavity, a second TCO film deposition PVD cavity and a third TCO film deposition PVD cavity which are sequentially connected through vacuum locks; the vacuum locks are also arranged at the head of the upper cavity and the tail of the lowercavity; a moving device penetrates through the cavities and the vacuum locks from front to back; a horizontal carrier plate is arranged in the feeding cavity, and arranged on the moving device in a state of being movable from front to back in the integrated equipment; a sputtering target is arranged in the second TCO film deposition PVD cavity; and each cavity is externally connected with an ultrapure gas path, a heating system and a vacuum pumping system. The working procedure of the product preparation process can be effectively prevented from being exposed to air, the performance of a crystalline silicon heterojunction solar cell is improved and the production cost the crystalline silicon heterojunction solar cell is reduced.

Description

technical field [0001] The invention relates to the field of manufacturing high-efficiency crystalline silicon solar cells, in particular to an 8-cavity horizontal HWCVD-PVD integrated equipment for solar cell manufacturing. Background technique [0002] Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon / crystalline silicon heterojunction structures. The two key steps in its production technology are the deposition of amorphous silicon-based films (including intrinsic layers and doped layers, made of amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon, etc.) and transparent conductive Deposition of the oxide TCO layer. The more commonly used deposition methods for amorphous silicon-based thin films are low-temperature chemical vapor deposition methods, including plasma chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD); the TCO layer is generally prepa...

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Problems solved by technology

The overall system is very complex

Moreover, because the product must be exposed to the air during the transfer process between the CVD and PVD systems, the surface of the product is affected by water vapor, oxygen, dust, etc. in the air, resulting in performance degradation; the operating costs in production are high, and the number of workers required is relatively large. many

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