Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor type gas sensor, multiple sensing device and recognition method of multiple sensing device

A gas sensor and multi-sensing technology, applied in the direction of measuring devices, instruments, scientific instruments, etc., can solve the problems of increased production cost, power consumption, inability to use PCB substrates, and difficulty in accurately detecting gases, so as to save production costs and reduce consumption Power and maintenance costs, effects of accurate gas detection

Pending Publication Date: 2020-03-03
吉福有限公司
View PDF12 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] As mentioned above, in the existing semiconductor type gas sensor, in order to activate the gas detection film, it is necessary to heat the heater at a minimum temperature of 300°C or higher and keep the activation temperature, so it is impossible to use epoxy resin, etc. General PCB substrates mainly use expensive heat-resistant substrates such as ceramic substrates, resulting in increased production costs and power consumption
In order to improve the sensitivity to the surrounding gas leakage, the existing gas-sensitive film needs to add catalysts such as Pt, and because the gas detection degree changes with the temperature and humidity around the gas-sensitive film, it is difficult to accurately detect the gas

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor type gas sensor, multiple sensing device and recognition method of multiple sensing device
  • Semiconductor type gas sensor, multiple sensing device and recognition method of multiple sensing device
  • Semiconductor type gas sensor, multiple sensing device and recognition method of multiple sensing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The following description will be made with reference to the accompanying drawings of embodiments of the present invention that can specifically achieve the above objects. In the description of the present embodiment, the same names and reference numerals are used for the same components, and additional description thereof will be omitted below.

[0028] figure 2 is a cross-sectional view of the semiconductor-type gas sensor of the present invention, image 3 It is a schematic cross-sectional view of a detection substance used to form a gas-sensitive film in a semiconductor-type gas sensor of the present invention, Figure 4 It is a graph of the composition distribution of the detection substance used to form the gas-sensitive film in the semiconductor-type gas sensor of the present invention, Figure 5 It is a graph comparing the change with time of the resistance value of the semiconductor-type gas sensor of the present invention and the conventional semiconductor-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a semiconductor type gas sensor, a multiple sensing device and a recognition method of the multiple sensing device. The semiconductor-type gas sensor includes a substrate, electrodes, a gas detection film, and a heater; the electrodes are formed on the upper surface of the substrate in the form of a predetermined pattern; the gas detection film has a predetermined thickness and coves the external exposed surfaces of the electrodes; the heater is closely attached onto the lower surface of the substrate and heats the gas detection film with a predetermined temperature; and the gas detection film is a mixture obtained by mixing a predetermined amount of thermosetting resin and a silane coupling agent as a binder into a SnO2-containing detection substance on which an amorphous layer is formed. According to the semiconductor type gas sensor, heating temperature for operating the semiconductor type gas sensor is significantly reduced, so that power consumed for operation and maintenance costs can be decreased; manufacturing costs can be decreased; measurement sensitivity can be improved; measurement variability due to changes in ambient temperature and humidity can be reduced; and gas can be accurately detected.

Description

technical field [0001] The invention relates to a semiconductor type gas sensor, a multiple sensing device and an identification method thereof. Specifically, in this semiconductor-type gas sensor, by significantly reducing the heating temperature for operating the semiconductor-type gas sensor, the operation power consumption and maintenance costs of the gas sensor can be saved, and the production cost can be reduced. While improving the measurement sensitivity, Gas can be accurately detected by reducing measurement variability caused by changes in temperature and humidity around the gas sensor. Background technique [0002] With the rapid development of modern society and the automobile industry, the problem of air pollution caused by toxic gases such as carbon monoxide, carbon dioxide, hydrogen sulfide and nitrogen dioxide has become increasingly prominent, and the risk of gas explosion or gas poisoning is increasing. Currently, research on gas sensors capable of measuri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 柳民金世奎孔正植
Owner 吉福有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products