Unlock instant, AI-driven research and patent intelligence for your innovation.

Pixel structure, manufacturing method thereof and image sensor

A technology of pixel structure and transmission tube, which is applied in the field of pixel structure and its manufacture, and image sensor, and can solve problems such as the difficulty in determining the width of the N buried layer and reducing the fill factor of photodiodes

Active Publication Date: 2020-03-10
BYD SEMICON CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the fill factor of the photodiode is reduced, and the magnitude of the lateral electric field is not linearly related to the width of the N-buried layer. It is difficult to determine the appropriate width of the N-buried layer to generate an electric field with a fixed direction.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel structure, manufacturing method thereof and image sensor
  • Pixel structure, manufacturing method thereof and image sensor
  • Pixel structure, manufacturing method thereof and image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Specific embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present disclosure, and are not intended to limit the present disclosure.

[0042] The present disclosure provides a pixel structure. figure 1 is a schematic diagram of a cross-sectional structure of a pixel structure provided by an exemplary embodiment. figure 2 It is a schematic top view structure diagram of a pixel structure provided by an exemplary embodiment. Such as figure 1 As shown, the pixel structure includes a photodiode, on which a gate oxide layer 19 and a transfer tube gate 13 (transfer tube gate polysilicon) are deposited on the photodiode, and on the gate oxide layer 19, the photodiode is close to the transfer tube gate Additional polysilicon 15 is also deposited on one side of 13 , and electrodes are drawn out fr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a pixel structure, a manufacturing method thereof and an image sensor. The pixel structure comprises a photodiode; a gate oxide layer (19) and a transmission tube gate electrode (13) are sequentially deposited on the photodiode; additional polycrystalline silicon (15) is further deposited on the gate oxide layer (19) and on the side, close to the transmission tube gate electrode (13), of the photodiode; and an electrode is led out from the additional polycrystalline silicon (15). In the way, when high voltage is applied to the electrode, a capacitor can be parasitizedbelow the additional polycrystalline silicon in the photodiode. During exposure, electrons are preferentially stored in the capacitor, so that the transfer time of the electrons is shortened, and image smear is reduced.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a pixel structure, a manufacturing method thereof, and an image sensor. Background technique [0002] An image sensor is a semiconductor device that converts an optical image formed by an imaging lens into an electronic signal. Image smearing is a phenomenon in which after an image sensor suddenly changes light intensity, residual images still appear in the next few frames of images. In a Complementary Metal-Oxide-Semiconductor (CMOS) image sensor, if the charge in the photodiode is not fully transferred to the floating node within one frame, the charge will remain in the photodiode When the next frame is exposed, it may cause image smearing, which will cause image defacement and reduce image quality. Especially when shooting bright objects under low-light conditions, the effect of this phenomenon on image quality is more obvious. [0003] In related techn...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14605H01L27/14643H01L27/14689
Inventor 谢勇郭先清刘坤
Owner BYD SEMICON CO LTD