Integrated proximity switch, proximity switch system and proximity switch manufacturing method

A technology of proximity switch and manufacturing method, which is applied in the field of proximity switch system and proximity switch manufacturing, and integrated proximity switch, which can solve the problems that Hall proximity switches cannot realize fully automatic standard production and large volume, and achieve easy automatic standardized production , high integration, high precision and the effects of high integration characteristics

Pending Publication Date: 2020-03-13
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to solve the technical problem that Hall proximity switches cannot realize fully automatic standard production and large volume in the prior art, and provide an integrated proximity switch, proximity switch system and proximity switch manufacturing method

Method used

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  • Integrated proximity switch, proximity switch system and proximity switch manufacturing method
  • Integrated proximity switch, proximity switch system and proximity switch manufacturing method
  • Integrated proximity switch, proximity switch system and proximity switch manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0044] Such as Figure 4 An integrated proximity switch system includes a magnetic object 6 and an integrated proximity switch 5; the magnetic object 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic object 6 and the integrated proximity switch 5. Such as image 3 , wherein the integrated proximity switch 5 includes a Hall integrated circuit 1, and a magnetic thin film layer 3 arranged on the back of the Hall integrated circuit 1, and an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnetic thin film layer 3, so The N pole of the magnetic thin film layer 3 is on the top and the S pole is on the bottom or the S pole is on the top and the N pole is on the bottom. The upper and lower positions of the N pole magnetic film layer 301 and the S pole magnetic film layer 302 of the magnetic film layer 3 are not limited; 1. The insulating layer 2 and the magnetic thin film layer 3 are packaged together. T...

Embodiment 2

[0047] Such as Figure 5 An integrated proximity switch system includes a magnetic object 6 and an integrated proximity switch 5; the magnetic object 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic object 6 and the integrated proximity switch 5. Wherein, the integrated proximity switch 5 includes a Hall integrated circuit 1, and a magnetic thin film layer 3 arranged on the back side of the Hall integrated circuit 1, and an insulating layer 2 is arranged between the Hall integrated circuit 1 and the magnetic thin film layer 3. The N pole of the magnetic film layer 3 is on the top and the S pole is on the bottom or the S pole is on the top and the N pole is on the bottom. The upper and lower positions of the N pole magnetic film layer 301 and the S pole magnetic film layer 302 of the magnetic film layer 3 are not limited; , the insulating layer 2 and the magnetic film layer 3 are packaged in one body, the insulating layer 2 is ...

Embodiment 3

[0050] An integrated proximity switch system includes a magnetic object 6 and an integrated proximity switch 5; the magnetic object 6 is arranged opposite to the integrated proximity switch 5, and a gap is left between the magnetic object 6 and the integrated proximity switch 5. Such as Figure 8 , wherein the integrated proximity switch 5 includes a Hall integrated circuit 1 and a magnet 4 arranged on the back of the Hall integrated circuit 1; an insulating layer 2 is provided between the Hall integrated circuit 1 and the magnet 4; the magnet 4 The N-pole and S-pole connections of the poles are perpendicular to the Hall integrated circuit 1; the Hall integrated circuit 1, the insulating layer 2 and the magnet 4 are packaged in one body. The thickness of the magnet 4 is 0.1 mm, and the insulating layer 2 is a silicon dioxide insulating layer with a thickness of 1000 nm.

[0051] This integrated proximity switch system can also be similar to the embodiment-widely used in vario...

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Abstract

The invention belongs to an integrated proximity switch and a processing method thereof, particularly relates to an integrated proximity switch, a proximity switch system and a proximity switch manufacturing method, and solves the technical problems of incapability of realizing full-automatic standard production and large size of a Hall proximity switch in the prior art. The integrated proximity switch comprises a Hall integrated circuit and a magnetic thin film layer arranged on the back surface of the Hall integrated circuit, an insulating layer is arranged between the Hall integrated circuit and the magnetic thin film layer, and an N pole of the magnetic thin film layer is arranged above an S pole of the magnetic thin film or the S pole of the magnetic thin film is arranged above the Npole of the magnetic thin film layer; the Hall integrated circuit, the insulating layer and the magnetic thin film layer are packaged into a whole; or the magnetic film layer is replaced by a magnet.According to the machining method of the integrated proximity switch, the magnetic film layer or the magnet is integrated on the Hall integrated circuit in a sputtering or pasting mode. The integratedproximity switch can also be used for an integrated proximity switch system, and the magnetic object and the integrated proximity switch are oppositely arranged.

Description

technical field [0001] The invention belongs to an integrated proximity switch and a processing method thereof, in particular to an integrated proximity switch, a proximity switch system and a method for manufacturing the proximity switch. Background technique [0002] The proximity switch made of Hall elements has the characteristics of non-contact, low power consumption, long service life and high response frequency, and has a wide range of applications. [0003] The working principle of the current traditional Hall proximity switch 01 is that when the magnetic target 02 is close to the Hall switch 01, the Hall element on the detection surface of the Hall switch 01 produces a Hall effect, which causes the state of the internal circuit of the Hall switch 01 to change. This is used to judge whether there is a magnetic target 02 nearby, and then to control the on-off of the Hall proximity switch 01. This type of Hall proximity switch 01 is simple in structure and easy to use...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/95
CPCH03K17/95
Inventor 张文伟宋瑞潮
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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