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Method for manufacturing monocrystalline silicon SE-PERC battery through secondary annealing

A secondary annealing and manufacturing method technology, applied in the field of solar cells, can solve the problems of reducing the photoelectric conversion efficiency of monocrystalline silicon SE-PERC cells, the opening voltage of crystalline silicon cells and the drop of short current, so as to reduce the recombination of carriers , Improve the opening pressure and short flow, and repair the damage caused by the effect

Inactive Publication Date: 2020-03-27
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] The technical problem to be solved by the present invention is: the front laser step destroys the lattice structure of the original silicon chip suede surface so that the carriers recombine near the surface defect state, resulting in a drop in the opening voltage and short current of the crystalline silicon cell, reducing the Photoelectric conversion efficiency of monocrystalline silicon SE-PERC cells

Method used

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  • Method for manufacturing monocrystalline silicon SE-PERC battery through secondary annealing
  • Method for manufacturing monocrystalline silicon SE-PERC battery through secondary annealing
  • Method for manufacturing monocrystalline silicon SE-PERC battery through secondary annealing

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Embodiment Construction

[0029] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0030] like Figure 2~3 Shown, a kind of manufacturing method of the monocrystalline silicon SE-PERC battery of secondary annealing, the step comprises:

[0031] 1. Texture making: use wet technology to form a textured surface on the surface of the P-type monocrystalline silicon wafer;

[0032] 2. Diffusion: P-N junction is formed by diffusion;

[0033] 3. Front laser: Prepare selective emitter, and use laser to do heavy doping on the surface of silicon wafer;

[0034] 4. The first annealing: repair the damage caused by the front laser to the surface of the silicon wafer, and passivate the surface to reduce the recombination of carriers.

[0035] 5. Etching: use HF / HNO...

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Abstract

The invention discloses a method for manufacturing a monocrystalline silicon SE-PERC battery through secondary annealing, and the method comprises the steps: texturing, diffusion, front laser, etching, annealing, a back passive film, a front passive film, back laser, silk-screen printing, sintering, and testing, and is characterized in that a step of repairing damage annealing is added after the front laser step and before the etching step. A laser annealing step is carried out after a front laser step, and a silicon wafer is put into a tubular annealing furnace to be annealed, so that the effect of repairing damage of front laser to the surface of the silicon wafer is achieved, the surface is passivated, carrier recombination is reduced, and the open-circuit voltage and the short-circuitcurrent of a crystalline silicon cell are improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for manufacturing a secondary annealed single crystal silicon SE-PERC cell. Background technique [0002] With the rise of monocrystalline silicon SE-PERC cells, lasers are more widely used in the preparation of crystalline silicon cells. Laser slotting and selective emitter preparation are inseparable from lasers. Technologies such as Metal Wrap Back Contact (MWT) and Emitter Piercing (EWT) also require laser perforation. The traditional monocrystalline silicon SE-PERC cell manufacturing steps are: [0003] 1. Texture making: use wet technology to form a textured surface on the surface of the P-type monocrystalline silicon wafer; [0004] 2. Diffusion: P-N junction is formed by diffusion; [0005] 3. Front laser: Prepare selective emitter, and use laser to do heavy doping on the surface of silicon wafer; [0006] 4. Etching: use HF / HNO3 solution for back polis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0687
CPCH01L31/0687H01L31/1804Y02E10/544Y02P70/50
Inventor 韩大伟林纲正陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD