Method for forming semiconductor structure and method for forming silicon oxide film on wafer
A silicon oxide film and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problem of poor uniformity of the trench 100, affecting the uniformity of etching of the silicon oxide layer 15, and affecting the process And product yield and other issues
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Embodiment 1
[0069] sequentially forming a stacked underlying silicon oxide layer, a first silicon nitride layer, a titanium nitride layer, and a second silicon nitride layer on the substrate;
[0070] The first silicon oxide layer was formed on the second silicon nitride layer by PECVD process, where the RF power was 800W; the reactants used were TEOS and O 2 , O 2 The flow ratio with TEOS is 3:1, and the flow rate of TEOS is 4000sccm.
[0071] A second silicon oxide layer is formed on the first silicon oxide layer by a PECVD process, wherein the reactants used are TEOS and O 2 , O 2 The ratio of flow rate to TEOS is 2.5:1, the flow rate of TEOS is 4000 sccm, and the RF power is adjusted to obtain semiconductor structures with different second silicon oxide layers:
[0072] When the radio frequency power is 1500W, the semiconductor structure S1 is produced;
[0073] When the radio frequency power is 1000W, the semiconductor structure S2 is obtained;
[0074] When the radio frequency ...
Embodiment 2
[0079] sequentially forming a stacked underlying silicon oxide layer, a first silicon nitride layer, a titanium nitride layer, and a second silicon nitride layer on the substrate;
[0080] The first silicon oxide layer was formed on the second silicon nitride layer by PECVD process, where the RF power was 800W; the reactants used were TEOS and O 2 , O 2 The flow ratio with TEOS is 3:1, and the flow rate of TEOS is 4000sccm;
[0081] The second silicon oxide layer was formed on the first silicon oxide layer by PECVD process, where the RF power was 1500W, and the reactants used were TEOS and O 2 , the flow rate of TEOS is 4000sccm, adjust O 2 The flow ratio to TEOS yields semiconductor structures with different second silicon oxide layers:
[0082] o 2 When the flow ratio with TEOS is 5:1, the semiconductor structure S4 is obtained;
[0083] o 2 When the flow ratio with TEOS is 3:1, the semiconductor structure S5 is obtained;
[0084] o 2 When the flow ratio with TEOS is...
Embodiment 3
[0089] On the substrate, sequentially form a stacked underlying silicon oxide layer, a first silicon nitride layer, a titanium nitride layer, and a second silicon nitride layer; adjust the radio frequency power, O 2 The flow ratio to TEOS yields semiconductor structures with different surface silicon oxide layers:
[0090] A 200nm silicon oxide layer was formed on the second silicon nitride layer by PECVD process, where the RF power was 1500W; the reactants used were TEOS and O 2 , O 2 The flow ratio to TEOS was 5:1, resulting in the semiconductor structure S6.
[0091] A 200nm silicon oxide layer was formed on the second silicon nitride layer by PECVD process, where the RF power was 700W; the reactants used were TEOS and O 2 , O 2 The flow ratio to TEOS was 2:1, resulting in semiconductor structure D4.
[0092] The semiconductor structures S6 and D4 were tested by FTIR respectively. For specific spectra, see Figure 7 .
[0093] Figure 5 to Figure 6 Be the infrared sp...
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