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Quartz glass crucible

A quartz glass crucible and bubble technology is applied in glass molding, glass manufacturing equipment, crystal growth and other directions, which can solve the problems of decreased single crystal rate, easy cracking, poor pulling process, etc., and achieves suppression of pores and high yield. Effect

Pending Publication Date: 2020-03-31
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, if there are many air bubbles near the inner surface of the crucible, when the inner surface of the crucible is melted and the inner air bubbles appear on the surface, the air bubbles expand at high temperatures during crystal pulling and are easy to break. (Silicon dioxide flakes) fall off from the inner surface of the crucible, and the crucible flakes are mixed into the silicon melt to make pulling unstable, resulting in failure of the pulling process due to entering the single crystal (single crystal silicon Dislocation, repeated smelting and other pulling processes, etc.), while the single crystallization rate decreases

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] (Embodiment 1: Evaluation test of 32-inch crucible)

[0073] A sample S1 of a quartz glass crucible having a diameter of 32 inches was prepared, and the distribution of the bubble content near the inner surface was measured. In the measurement of the air bubble content, an automatic measuring machine was used to determine the size of the air bubbles present in the range from the inner surface to a depth of about 0.5 mm in the area of ​​5×5 mm at each measurement point, and the air bubble content was calculated.

[0074] In the measurement of the air bubble content rate, measurement was performed at a pitch of 20 mm in the radial direction (vertical direction) from the center of the bottom of the crucible toward the upper end of the edge. As a result, the air bubble content of the crucible sample S1 was 0-0.10% at the bottom, 0.12-0.15% at the corner, 0.13-0.41% at the lower part of the straight body, and 0.45-0.68% at the upper part of the straight body. The range of e...

Embodiment 2

[0096] (Example 2: Evaluation test of 24-inch crucible)

[0097] A sample S9 of a quartz glass crucible with a diameter of 24 inches was prepared, and the distribution of the air bubble content near the inner surface was measured. The air bubble content of the crucible sample S9 was 0% at the bottom and 0% to 0.12% at the corners. The lower part of the straight body: 0.15-0.19%, the upper part of the straight body: 0.20-0.50%. The range of each part of the crucible based on the bottom center of the 24-inch crucible is: bottom: 0-240mm, corner: 240-400mm, lower part of the straight body: 400-510mm, upper part of the straight body: 510-620mm. The maximum value of the bubble content rate in each part of the crucible sample S9 is shown in Figure 5 in the graph of .

[0098] Next, the silicon single crystal was pulled five times by the CZ method using five quartz glass crucibles of the same type manufactured under the same conditions, including the quartz glass crucible sample S...

Embodiment 3

[0112] (Example 3: Evaluation test of bubble size)

[0113] The relationship between the distribution of the bubble content and the size of the bubbles in a 32-inch-diameter quartz glass crucible was evaluated. As a result, the bubble content rate of the quartz glass crucible was as follows: the bottom: about 0%, the corner: 0.12-0.21%, the lower part of the straight body: 0.21-0.52%, and the upper part of the straight body: 0.32-0.59%. The maximum value of the bubble content rate in each part of the crucible sample is shown in Figure 6 in the graph of .

[0114] Such as Figure 6 As shown, it can be seen that the ratio of the medium diameter size of 100 to 300 μm is the largest at any measurement point, but in the part where the bubble content rate is low, the ratio of the small diameter size (50 to 100 μm) to the whole is high, and the large diameter The ratio of the size (300 to 500 μm) to the whole is low. Furthermore, it can be seen that the higher the bubble content...

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Abstract

The invention provide a quartz glass crucible with which it is possible to achieve both enhancement of the manufacturing yield of silicon monocrystals and suppression of pinhole generation in the monocrystals. A quartz glass crucible (1) includes: a cylindrical straight body section (1a); a curved bottom section (1b); and a corner section (1c) provided between the straight body section (1a) and the bottom section (1b), wherein, in an upper section (1a1) of the straight body section (1a), the air-bubble content of an inner-surface-layer section between an inner surface and a depth of 0.5 mm therefrom is 0.2-2%, the air-bubble content of the inner-surface-layer section in a lower section (1a2) of the straight body section (1a) is greater than 0.1% and equal to or less than 1.3 times a lowerlimit of the air-bubble content of the upper section (1a1) of the straight body section (1a), the air-bubble content of the inner-surface-layer section in the corner section (1c) is greater than 0.1%and equal to or less than 0.5%, and the air-bubble content of the inner-surface-layer section in the bottom section (1b) is equal to or less than 0.1%.

Description

technical field [0001] The present invention relates to a quartz glass crucible, in particular to a quartz glass crucible used in pulling single crystal silicon by a pulling method (CZ method). Background technique [0002] Quartz glass crucibles are used in the production of silicon single crystals by the CZ method. In the CZ method, a silicon raw material is heated and melted in a quartz glass crucible, a seed crystal is immersed in the silicon melt, and the seed crystal is slowly pulled while rotating the crucible to grow a single crystal. In order to manufacture high-quality single crystal silicon for semiconductor devices at low cost, it is necessary to increase the production yield of single crystal silicon free from dislocations and defects. [0003] In the pulling step of silicon single crystal, the inner surface of the quartz glass crucible contacts the silicon melt, reacts with the silicon melt, and gradually melts away. Here, if there are many air bubbles near t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C03B20/00C30B15/10
CPCC03B20/00C30B15/10C30B29/06C30B35/002
Inventor 吉冈拓麿大原真美
Owner SUMCO CORP